Issued Patents 2020
Showing 26–50 of 69 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10707115 | Dry fin reveal without fin damage | Kangguo Cheng | 2020-07-07 |
| 10703720 | Method for preparing chromium(III) pyridine-2-carboxylate using 2-OP rectification residues | Zhaosheng Cai, Jinghua Yu, Pan Xu, Jinyu Bian, Ge Ding +4 more | 2020-07-07 |
| 10700195 | Reduced resistance source and drain extensions in vertical field effect transistors | Chun Wing Yeung, Chen Zhang | 2020-06-30 |
| 10699959 | Integrating metal-insulator-metal capacitors with fabrication of vertical field effect transistors | Kangguo Cheng, Xuefeng Liu, Heng Wu | 2020-06-30 |
| 10692772 | Integrating metal-insulator-metal capacitors with fabrication of vertical field effect transistors | Kangguo Cheng, Xuefeng Liu, Heng Wu | 2020-06-23 |
| 10693007 | Wrapped contacts with enhanced area | Kangguo Cheng, Zuoguang Liu, Heng Wu | 2020-06-23 |
| 10689245 | Vertically stacked nanofluidic channel array | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2020-06-23 |
| 10686048 | Vertical fin with a gate structure having a modified gate geometry | Kangguo Cheng | 2020-06-16 |
| 10685872 | Electrically isolated contacts in an active region of a semiconductor device | Kangguo Cheng, Ekmini Anuja De Silva, Ruilong Xie | 2020-06-16 |
| 10665511 | Self-limiting liners for increasing contact trench volume in N-type and P-type transistors | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2020-05-26 |
| 10665505 | Self-aligned gate contact isolation | Kangguo Cheng, Ekmini Anuja De Silva, Ruilong Xie | 2020-05-26 |
| 10658473 | Gate cut device fabrication with extended height gates | Kangguo Cheng, Andrew M. Greene, John R. Sporre | 2020-05-19 |
| 10651378 | Resistive random-access memory | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2020-05-12 |
| 10644108 | Strained and unstrained semiconductor device features formed on the same substrate | Kangguo Cheng, Juntao Li | 2020-05-05 |
| 10636887 | Self-limiting fin spike removal | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2020-04-28 |
| 10636709 | Semiconductor fins with dielectric isolation at fin bottom | Kangguo Cheng, Jay William Strane | 2020-04-28 |
| 10629589 | Resistor fins | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2020-04-21 |
| 10622208 | Lateral semiconductor nanotube with hexagonal shape | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2020-04-14 |
| 10608096 | Formation of air gap spacers for reducing parasitic capacitance | Kangguo Cheng, Choonghyun Lee, Heng Wu | 2020-03-31 |
| 10608100 | Unipolar spacer formation for finFETs | Kangguo Cheng, Jie Yang | 2020-03-31 |
| 10600889 | Nanosheet transistors with thin inner spacers and tight pitch gate | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2020-03-24 |
| 10593802 | Forming a sacrificial liner for dual channel devices | Huiming Bu, Kangguo Cheng, Dechao Guo, Sivananda K. Kanakasabapathy | 2020-03-17 |
| 10586737 | Method and structure for forming vertical transistors with shared gates and separate gates | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2020-03-10 |
| 10573566 | Fabrication of fin field effect transistor complementary metal-oxide-semiconductor devices with uniform hybrid channels | Zhenxing Bi, Kangguo Cheng, Jie Yang | 2020-02-25 |
| 10573561 | Formation of stacked nanosheet semiconductor devices | Kangguo Cheng, Juntao Li, Heng Wu | 2020-02-25 |