Issued Patents 2020
Showing 26–37 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10615043 | Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Vijay Narayanan | 2020-04-07 |
| 10607990 | Fabrication of field effect transistors with different threshold voltages through modified channel interfaces | Takashi Ando, Ruqiang Bao, Choonghyun Lee | 2020-03-31 |
| 10593797 | Vertical transport field effect transistor structure with self-aligned top junction through early top source/drain epitaxy | Shogo Mochizuki, Brent A. Anderson, Junli Wang | 2020-03-17 |
| 10580881 | Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices | Ruqiang Bao, Paul C. Jamison, Choonghyun Lee | 2020-03-03 |
| 10573746 | VTFET devices utilizing low temperature selective epitaxy | Shogo Mochizuki | 2020-02-25 |
| 10573565 | Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments | Lisa F. Edge, Paul C. Jamison, Vamsi K. Paruchuri | 2020-02-25 |
| 10559672 | Vertical transport field-effect transistor including dual layer top spacer | Choonghyun Lee, Alexander Reznicek, Christopher J. Waskiewicz | 2020-02-11 |
| 10559671 | Vertical transport field-effect transistor including air-gap top spacer | Choonghyun Lee, Alexander Reznicek, Christopher J. Waskiewicz | 2020-02-11 |
| 10546787 | Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device | Ruqiang Bao, Vijay Narayanan, Terence B. Hook | 2020-01-28 |
| 10541239 | Semiconductor device and method of forming the semiconductor device | Robin Hsin Kuo Chao, Choonghyun Lee, Chun Wing Yeung, Jingyun Zhang | 2020-01-21 |
| 10535773 | FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation | Dechao Guo, Shogo Mochizuki, Gen Tsutsui, Chun-Chen Yeh | 2020-01-14 |
| 10529573 | Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Vijay Narayanan | 2020-01-07 |