| 10141308 |
Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices |
Praneet Adusumilli, Dechao Guo, Zuoguang Liu, Rajasekhar Venigalla, Tenko Yamashita |
2018-11-27 |
| 10134763 |
Gate top spacer for finFET |
Veeraraghavan S. Basker, Shogo Mochizuki, Alexander Reznicek |
2018-11-20 |
| 10115824 |
Forming a contact for a semiconductor device |
Zuoguang Liu, Shogo Mochizuki, Hiroaki Niimi, Ruilong Xie |
2018-10-30 |
| 10109722 |
Etch-resistant spacer formation on gate structure |
Ruilong Xie, Zhenxing Bi, Pietro Montanini, Eric R. Miller, Balasubramanian Pranatharthiharan +2 more |
2018-10-23 |
| 10079299 |
Self aligned top extension formation for vertical transistors |
Sanjay C. Mehta, Shogo Mochizuki, Alexander Reznicek |
2018-09-18 |
| 10068920 |
Silicon germanium fins on insulator formed by lateral recrystallization |
Alexander Reznicek, Veeraraghavan S. Basker, Shogo Mochizuki, Nicolas L. Breil |
2018-09-04 |
| 10032883 |
Silicon germanium heterojunction bipolar transistor structure and method |
Rajendran Krishnasamy, Kathryn T. Schonenberg |
2018-07-24 |
| 9997348 |
Wafer stress control and topography compensation |
Timothy A. Brunner, Donghun Kang, Byeong Y. Kim |
2018-06-12 |
| 9997361 |
Gate stack formed with interrupted deposition processes and laser annealing |
Takashi Ando, Aritra Dasgupta, Balaji Kannan, Unoh Kwon |
2018-06-12 |
| 9997407 |
Voidless contact metal structures |
Veeraraghavan S. Basker, Nicolas L. Breil, Shogo Mochizuki, Alexander Reznicek |
2018-06-12 |
| 9997610 |
Gate stack formed with interrupted deposition processes and laser annealing |
Takashi Ando, Aritra Dasgupta, Balaji Kannan, Unoh Kwon |
2018-06-12 |
| 9985114 |
Fin field effect transistor structure and method to form defect free merged source and drain epitaxy for low external resistance |
Veeraraghavan S. Basker, Shogo Mochizuki, Alexander Reznicek |
2018-05-29 |
| 9978750 |
Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices |
Praneet Adusumilli, Dechao Guo, Zuoguang Liu, Rajasekhar Venigalla, Tenko Yamashita |
2018-05-22 |
| 9972682 |
Low resistance source drain contact formation |
Zuoguang Liu, Shogo Mochizuki, Hiroaki Niimi, Chun-Chen Yeh |
2018-05-15 |
| 9954103 |
Bottom spacer formation for vertical transistor |
Sanjay C. Mehta, Shogo Mochizuki, Alexander Reznicek |
2018-04-24 |
| 9941391 |
Method of forming vertical transistor having dual bottom spacers |
Sanjay C. Mehta, Shogo Mochizuki, Alexander Reznicek |
2018-04-10 |
| 9941302 |
Structure and method to form defect free high-mobility semiconductor fins on insulator |
Veeraraghavan S. Basker, Shogo Mochizuki, Alexander Reznicek |
2018-04-10 |
| 9917060 |
Forming a contact for a semiconductor device |
Zuoguang Liu, Shogo Mochizuki, Hiroaki Niimi, Ruilong Xie |
2018-03-13 |
| 9911849 |
Transistor and method of forming same |
Veeraraghavan S. Basker, Nicolas L. Breil, Shogo Mochizuki, Alexander Reznicek |
2018-03-06 |
| 9905692 |
SOI FinFET fins with recessed fins and epitaxy in source drain region |
Alexander Reznicek, Shogo Mochizuki, Veeraraghavan S. Basker, Nicolas L. Breil |
2018-02-27 |
| 9859216 |
Voidless contact metal structures |
Veeraraghavan S. Basker, Nicolas L. Breil, Shogo Mochizuki, Alexander Reznicek |
2018-01-02 |
| 9859121 |
Multiple nanosecond laser pulse anneal processes and resultant semiconductor structure |
Aritra Dasgupta |
2018-01-02 |
