Issued Patents 2016
Showing 25 most recent of 53 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9530651 | Replacement metal gate finFET | Hemanth Jagannathan, Sanjay C. Mehta, Junli Wang, Stefan Schmitz | 2016-12-27 |
| 9525048 | Symmetrical extension junction formation with low-k spacer and dual epitaxial process in finFET device | Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita | 2016-12-20 |
| 9515180 | Vertical slit transistor with optimized AC performance | Qing Liu, Xiuyu Cai, Ruilong Xie | 2016-12-06 |
| 9508713 | Densely spaced fins for semiconductor fin field effect transistors | Hong He, Chiahsun Tseng, Yunpeng Yin | 2016-11-29 |
| 9502518 | Multi-channel gate-all-around FET | Qing Liu, Ruilong Xie, Xiuyu Cai | 2016-11-22 |
| 9502302 | Process for integrated circuit fabrication including a uniform depth tungsten recess technique | Qing Liu, Ruilong Xie | 2016-11-22 |
| 9502523 | Nanowire semiconductor device including lateral-etch barrier region | Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita | 2016-11-22 |
| 9496185 | Dual channel finFET with relaxed pFET region | Xiuyu Cai, Qing Liu, Ruilong Xie | 2016-11-15 |
| 9484440 | Methods for forming FinFETs with non-merged epitaxial fin extensions | Hong He, Shogo Mochizuki, Chiahsun Tseng, Yunpeng Yin | 2016-11-01 |
| 9484262 | Stressed channel bulk fin field effect transistor | Veeraraghavan S. Basker, Akira Hokazono, Hiroshi Itokawa, Tenko Yamashita | 2016-11-01 |
| 9484402 | Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion | Ming Cai, Dechao Guo, Liyang Song | 2016-11-01 |
| 9472407 | Replacement metal gate FinFET | Hemanth Jagannathan, Sanjay C. Mehta, Junli Wang, Stefan Schmitz | 2016-10-18 |
| 9466722 | Large area contacts for small transistors | Qing Liu, Ruilong Xie, Xiuyu Cai | 2016-10-11 |
| 9460969 | Macro to monitor n-p bump | Xiuyu Cai, Qing Liu, Ruilong Xie | 2016-10-04 |
| 9455317 | Nanowire semiconductor device including lateral-etch barrier region | Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita | 2016-09-27 |
| 9443775 | Lithography process monitoring of local interconnect continuity | Hyun-Jin Cho, Tenko Yamashita, Hui Zang | 2016-09-13 |
| 9437499 | Semiconductor device including merged-unmerged work function metal and variable fin pitch | Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita | 2016-09-06 |
| 9437436 | Replacement metal gate FinFET | Hemanth Jagannathan, Sanjay C. Mehta, Junli Wang, Stefan Schmitz | 2016-09-06 |
| 9431521 | Stress memorization technique for strain coupling enhancement in bulk finFET device | Kangguo Cheng, Juntao Li | 2016-08-30 |
| 9431540 | Method for making a semiconductor device with sidewall spacers for confining epitaxial growth | Qing Liu, Ruilong Xie, Xiuyu Cai | 2016-08-30 |
| 9412643 | Shallow trench isolation for end fin variation control | Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita | 2016-08-09 |
| 9412820 | Semiconductor device with thinned channel region and related methods | Qing Liu, Tenko Yamashita, Veeraraghavan S. Basker | 2016-08-09 |
| 9412641 | FinFET having controlled dielectric region height | Dechao Guo, Zuoguang Liu, Tenko Yamashita | 2016-08-09 |
| 9406751 | Method for making strained semiconductor device and related methods | Qing Liu, Xiuyu Cai, Ruilong Xie | 2016-08-02 |
| 9396957 | Non-lithographic line pattern formation | Chiahsun Tseng, David V. Horak, Yunpeng Yin | 2016-07-19 |