JP

Jaeyong Park

FA Fasl: 3 patents #5 of 30Top 20%
AM AMD: 2 patents #222 of 906Top 25%
SL Spansion Llc.: 1 patents #2 of 24Top 9%
📍 Seoul, CA: #3 of 106 inventorsTop 3%
Overall (2005): #4,532 of 245,428Top 2%
6
Patents 2005

Issued Patents 2005

Showing 1–6 of 6 patents

Patent #TitleCo-InventorsDate
6969886 ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices Hidehiko Shiraiwa, Arvind Halliyal, Jean Y. Yang, Inkuk Kang, Tazrien Kamal +1 more 2005-11-29
6958511 Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogen Arvind Halliyal, Amir H. Jafarpour, Hidehiko Shiraiwa, Tazrien Kamal, Mark T. Ramsbey 2005-10-25
6949433 Method of formation of semiconductor resistant to hot carrier injection stress Shiraiwa Hidehiko, Arvind Halliyal 2005-09-27
6927145 Bitline hard mask spacer flow for memory cell scaling Jean Y. Yang, Mark T. Ramsbey, Tazrien Kamal, Emmanuil H. Lingunis 2005-08-09
6894342 Structure and method for preventing UV radiation damage in a memory cell and improving contact CD control Angela T. Hui, Minh Van Ngo, Ning Cheng, Jean Y. Yang, Hirokazu Tokuno +2 more 2005-05-17
6855608 Method of fabricating a planar structure charge trapping memory cell array with rectangular gates and reduced bit line resistance Mark T. Ramsbey, Mark Randolph, Jean Y. Yang, Hiroyuki Kinoshita, Cyrus E. Tabery +3 more 2005-02-15