Issued Patents 2005
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6969886 | ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices | Jaeyong Park, Hidehiko Shiraiwa, Jean Y. Yang, Inkuk Kang, Tazrien Kamal +1 more | 2005-11-29 |
| 6958511 | Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogen | Amir H. Jafarpour, Hidehiko Shiraiwa, Tazrien Kamal, Mark T. Ramsbey, Jaeyong Park | 2005-10-25 |
| 6955965 | Process for fabrication of nitride layer with reduced hydrogen content in ONO structure in semiconductor device | Tazrien Kamal, Hidehiko Shiraiwa, Jean Y. Yang | 2005-10-18 |
| 6955997 | Laser thermal annealing method for forming semiconductor low-k dielectric layer | Minh Van Ngo | 2005-10-18 |
| 6949433 | Method of formation of semiconductor resistant to hot carrier injection stress | Shiraiwa Hidehiko, Jaeyong Park | 2005-09-27 |
| 6949481 | Process for fabrication of spacer layer with reduced hydrogen content in semiconductor device | Fred Cheung, Rinji Sugino, Hidehiko Shiraiwa, Tazrien Kamal, Jean Y. Yang | 2005-09-27 |
| 6900121 | Laser thermal annealing to eliminate oxide voiding | Minh Van Ngo, Dawn Hopper | 2005-05-31 |
| 6884681 | Method of manufacturing a semiconductor memory with deuterated materials | Tazrien Kamal, Minh Van Ngo, Mark T. Ramsbey, Jean Y. Yang, Hidehiko Shiraiwa +1 more | 2005-04-26 |
| 6872643 | Implant damage removal by laser thermal annealing | Nicholas H. Tripsas, Mark T. Ramsbey | 2005-03-29 |
| 6858496 | Oxidizing pretreatment of ONO layer for flash memory | Robert B. Ogle | 2005-02-22 |
| 6849925 | Preparation of composite high-K/standard-K dielectrics for semiconductor devices | Joong S. Jeon, Minh Van Ngo, Robert B. Ogle | 2005-02-01 |