Issued Patents 2005
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6969886 | ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices | Jaeyong Park, Arvind Halliyal, Jean Y. Yang, Inkuk Kang, Tazrien Kamal +1 more | 2005-11-29 |
| 6958511 | Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogen | Arvind Halliyal, Amir H. Jafarpour, Tazrien Kamal, Mark T. Ramsbey, Jaeyong Park | 2005-10-25 |
| 6955965 | Process for fabrication of nitride layer with reduced hydrogen content in ONO structure in semiconductor device | Arvind Halliyal, Tazrien Kamal, Jean Y. Yang | 2005-10-18 |
| 6949481 | Process for fabrication of spacer layer with reduced hydrogen content in semiconductor device | Arvind Halliyal, Fred Cheung, Rinji Sugino, Tazrien Kamal, Jean Y. Yang | 2005-09-27 |
| 6912163 | Memory device having high work function gate and method of erasing same | Wei Zheng, Yun Wu, Mark T. Ramsbey, Tazrien Kamal | 2005-06-28 |
| 6894342 | Structure and method for preventing UV radiation damage in a memory cell and improving contact CD control | Angela T. Hui, Minh Van Ngo, Ning Cheng, Jaeyong Park, Jean Y. Yang +2 more | 2005-05-17 |
| 6884681 | Method of manufacturing a semiconductor memory with deuterated materials | Tazrien Kamal, Arvind Halliyal, Minh Van Ngo, Mark T. Ramsbey, Jean Y. Yang +1 more | 2005-04-26 |