Issued Patents 2003
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6660633 | Method of reducing electromigration in a copper line by electroplating an interim copper-zinc alloy thin film on a copper surface and a semiconductor device thereby formed | Alexander H. Nickel | 2003-12-09 |
| 6646353 | Semiconductor device having reduced electromigration in copper lines with calcium-doped copper surfaces formed by using a chemical solution | — | 2003-11-11 |
| 6630741 | Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formed | Paul L. King, Joffre F. Bernard | 2003-10-07 |
| 6624074 | Method of fabricating a semiconductor device by calcium doping a copper surface using a chemical solution | Joffre F. Bernard, Paul L. King | 2003-09-23 |
| 6624075 | Method of reducing electromigration in a copper line by Zinc-Doping of a copper surface from an electroplated copper-zinc alloy thin film and a semiconductor device thereby formed | Alexander H. Nickel | 2003-09-23 |
| 6621165 | Semiconductor device fabricated by reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface | Paul L. King, Joffre F. Bernard | 2003-09-16 |
| 6589408 | Non-planar copper alloy target for plasma vapor deposition systems | Pin-Chin Connie Wang, Paul R. Besser, Minh Quoc Tran | 2003-07-08 |
| 6583051 | Method of manufacturing an amorphized barrier layer for integrated circuit interconnects | Minh Van Ngo, Minh Quoc Tran | 2003-06-24 |
| 6563222 | Method and apparatus for reducing electromigration in semiconductor interconnect lines | Takeshi Nogami | 2003-05-13 |
| 6559546 | Tin palladium activation with maximized nuclei density and uniformity on barrier material in interconnect structure | Krishnashree Achuthan | 2003-05-06 |
| 6555909 | Seedless barrier layers in integrated circuits and a method of manufacture therefor | Pin-Chin Connie Wang | 2003-04-29 |
| 6555171 | Cu/Sn/Pd activation of a barrier layer for electroless CU deposition | — | 2003-04-29 |
| 6538327 | Method of copper interconnect formation using atomic layer copper deposition and a device thereby formed | Carl Galewski, Takeshi Nogami | 2003-03-25 |
| 6534865 | Method of enhanced fill of vias and trenches | Pin-Chin Connie Wang | 2003-03-18 |
| 6528409 | Interconnect structure formed in porous dielectric material with minimized degradation and electromigration | Fei Wang, Diana M. Schonauer, Steven C. Avanzino | 2003-03-04 |
| 6528884 | Conformal atomic liner layer in an integrated circuit interconnect | Minh Van Ngo | 2003-03-04 |
| 6528424 | Method of electroplating a copper-zinc alloy thin film on a copper surface using a chemical solution | Alexander H. Nickel | 2003-03-04 |
| 6528412 | Depositing an adhesion skin layer and a conformal seed layer to fill an interconnect opening | Pin-Chin Connie Wang | 2003-03-04 |
| 6518648 | Superconductor barrier layer for integrated circuit interconnects | — | 2003-02-11 |
| 6515368 | Semiconductor device with copper-filled via includes a copper-zinc/alloy film for reduced electromigration of copper | Alexander H. Nickel | 2003-02-04 |
| 6509262 | Method of reducing electromigration in copper lines by calcium-doping copper surfaces in a chemical solution | — | 2003-01-21 |
| 6504251 | Heat/cold amorphized barrier layer for integrated circuit interconnects | Minh Quoc Tran, Minh Van Ngo | 2003-01-07 |