Issued Patents 2003
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6630741 | Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formed | Sergey Lopatin, Joffre F. Bernard | 2003-10-07 |
| 6624074 | Method of fabricating a semiconductor device by calcium doping a copper surface using a chemical solution | Sergey Lopatin, Joffre F. Bernard | 2003-09-23 |
| 6621165 | Semiconductor device fabricated by reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface | Sergey Lopatin, Joffre F. Bernard | 2003-09-16 |
| 6610181 | Method of controlling the formation of metal layers | Paul R. Besser, Susan Kim | 2003-08-26 |
| 6611576 | Automated control of metal thickness during film deposition | Paul R. Besser | 2003-08-26 |
| 6605513 | Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing | Eric N. Paton, Ercan Adem, Jacques Bertrand, Paul R. Besser, Matthew S. Buynoski +4 more | 2003-08-12 |
| 6602781 | Metal silicide gate transistors | Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Eric N. Paton | 2003-08-05 |
| 6562718 | Process for forming fully silicided gates | Qi Xiang, Ercan Adem, Jacques Bertrand, Paul R. Besser, Matthew S. Buynoski +5 more | 2003-05-13 |
| 6559051 | Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors | Matthew S. Buynoski, Paul R. Besser, Eric N. Paton, Qi Xang | 2003-05-06 |