MX

Manchao Xiao

VU Versum Materials Us: 50 patents #2 of 174Top 2%
Air Products And Chemicals: 49 patents #11 of 1,997Top 1%
📍 Tempe, AZ: #7 of 2,648 inventorsTop 1%
🗺 Arizona: #132 of 32,909 inventorsTop 1%
Overall (All Time): #14,734 of 4,157,543Top 1%
99
Patents All Time

Issued Patents All Time

Showing 76–99 of 99 patents

Patent #TitleCo-InventorsDate
8507040 Binary and ternary metal chalcogenide materials and method of making and using same Xinjian Lei, Liu Yang 2013-08-13
8460753 Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes Liu Yang, Kirk Scott Cuthill, Heather Regina Bowen, Bing Han, Mark Leonard O'Neill 2013-06-11
8383849 Precursors for CVD silicon carbo-nitride films Arthur Kenneth Hochberg 2013-02-26
8377341 Tellurium (Te) precursors for making phase change memory materials Thomas Richard Gaffney 2013-02-19
8318252 Antimony precursors for GST films in ALD/CVD processes 2012-11-27
8298628 Low temperature deposition of silicon-containing films Liu Yang, Xinjian Lei, Bing Han, Eugene Joseph Karwacki, Jr., Kazuhide Hasebe +3 more 2012-10-30
8293001 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, John Anthony Thomas Norman 2012-10-23
8193027 Method of making a multicomponent film Liu Yang, Xinjian Lei, Iain Buchanan 2012-06-05
8129555 Precursors for depositing silicon-containing films and methods for making and using same Hansong Cheng, Gauri Sankar Lal, Thomas Richard Gaffney, Chenggang Zhou, Jinping Wu 2012-03-06
7999355 Aminosilanes for shallow trench isolation films Scott J. Weigel, Mark Leonard O'Neill, Bing Han, Hansong Cheng, Chia-Chien Lee 2011-08-16
7960205 Tellurium precursors for GST films in an ALD or CVD process Liu Yang, Thomas Richard Gaffney 2011-06-14
7943195 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, John Anthony Thomas Norman 2011-05-17
7932413 Precursors for CVD silicon carbo-nitride films Arthur Kenneth Hochberg 2011-04-26
7875312 Process for producing silicon oxide films for organoaminosilane precursors Hareesh Thridandam, Xinjian Lei, Thomas Richard Gaffney 2011-01-25
7875556 Precursors for CVD silicon carbo-nitride and silicon nitride films Arthur Kenneth Hochberg 2011-01-25
7678422 Cyclic chemical vapor deposition of metal-silicon containing films Xinjian Lei, Hareesh Thridandam, Heather Regina Bowen, Thomas Richard Gaffney 2010-03-16
7384471 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, John Anthony Thomas Norman 2008-06-10
7300995 Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane Steven Gerard Mayorga, Thomas Richard Gaffney, Robert George Syvret 2007-11-27
7288145 Precursors for depositing silicon containing films Arthur Kenneth Hochberg, Kirk Scott Cuthill 2007-10-30
7122222 Precursors for depositing silicon containing films and processes thereof Arthur Kenneth Hochberg, Kirk Scott Cuthill 2006-10-17
7101948 Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane Steven Gerard Mayorga, Thomas Richard Gaffney, Robert George Syvret 2006-09-05
7064224 Organometallic complexes and their use as precursors to deposit metal films Xinjian Lei, Hareesh Thridandam, Kirk Scott Cuthill 2006-06-20
6858697 Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane Steven Gerard Mayorga, Thomas Richard Gaffney 2005-02-22
6846515 Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, John Anthony Thomas Norman 2005-01-25