Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8394231 | Plasma process device and plasma process method | Koichi Takatsuki, Hikaru Yoshitaka, Shigeo Ashigaki, Yoichi Inoue, Takashi Akahori +7 more | 2013-03-12 |
| 7662728 | Substrate processing method | Yusaku Kashiwagi, Yasuhiro Oshima, Yoshihisa Kagawa | 2010-02-16 |
| 7601402 | Method for forming insulation film and apparatus for forming insulation film | Yusaku Kashiwagi, Yoshihisa Kagawa, Kohei Kawamura | 2009-10-13 |
| 6949829 | Semiconductor device and fabrication method therefor | Takashi Akahori, Kohei Kawamura | 2005-09-27 |
| 6893953 | Fabrication process of a semiconductor device including a CVD process of a metal film | Tomohisa Hoshino, Vincent Vezin | 2005-05-17 |
| 6890869 | Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof | — | 2005-05-10 |
| 5352913 | Dynamic memory storage capacitor having reduced gated diode leakage | William R. McKee, Clarence W. Teng | 1994-10-04 |
| 5252506 | Method to eliminate gate filaments on field plate isolated devices | Duane E. Carter, William R. McKee, Fred Fishburn | 1993-10-12 |
| 5251168 | Boundary cells for improving retention time in memory devices | William R. McKee, William F. Richardson, Lionel S. White, Jr. | 1993-10-05 |
| 5202279 | Poly sidewall process to reduce gated diode leakage | William R. McKee, Clarence W. Teng | 1993-04-13 |
| 5112762 | High angle implant around top of trench to reduce gated diode leakage | Dirk N. Anderson, William R. McKee | 1992-05-12 |
| 5017506 | Method for fabricating a trench DRAM | Bing W. Shen, Randy McKee | 1991-05-21 |
| 4978634 | Method of making trench DRAM cell with stacked capacitor and buried lateral contact | Bing W. Shen, Masaaki Yashiro, Randy McKee, Kiyoshi Shirai, Clarence W. Teng +1 more | 1990-12-18 |