| 6861348 |
Pre-pattern surface modification of low-k dielectrics |
Brian K. Kirkpatrick, Michael Morrison, Andrew John McKerrow, Kenneth Newton |
2005-03-01 |
| 6720247 |
Pre-pattern surface modification for low-k dielectrics using A H2 plasma |
Brian K. Kirkpatrick, Michael Morrison, Andrew John McKerrow, Kenneth Newton |
2004-04-13 |
| 6559050 |
Process for high thermal stable contact formation in manufacturing sub-quarter-micron CMOS devices |
William R. McKee, Jiong-Ping Lu, Ming-Jang Hwang, Wei William Lee |
2003-05-06 |
| 6380008 |
Edge stress reduction by noncoincident layers |
Siang Ping Kwok, William F. Richardson |
2002-04-30 |
| 6373088 |
Edge stress reduction by noncoincident layers |
Siang Ping Kwok, William F. Richardson |
2002-04-16 |
| 6245605 |
Method to protect metal from oxidation during poly-metal gate formation in semiconductor device manufacturing |
Ming-Jang Hwang, Wei-Yung Hsu, Chih-Chen Cho |
2001-06-12 |
| 6207500 |
DRAM chip fabrication method |
Yin Hu |
2001-03-27 |
| 6187656 |
CVD-based process for manufacturing stable low-resistivity poly-metal gate electrodes |
Jiong-Ping Lu, Ming-Jang Hwang, Jorge A. Kittl, Hun-Lian Tsai |
2001-02-13 |
| 6159835 |
Encapsulated low resistance gate structure and method for forming same |
Mark Visokay |
2000-12-12 |
| 6136700 |
Method for enhancing the performance of a contact |
Peter S. McAnally, Jeffrey McKee |
2000-10-24 |
| 6033975 |
Implant screen and method |
Siang Ping Kwok, William F. Richardson, Jiann Liu |
2000-03-07 |
| 5796151 |
Semiconductor stack having a dielectric sidewall for prevention of oxidation of tungsten in tungsten capped poly-silicon gate electrodes |
Wei-Yung Hsu, Robert J. Kraft |
1998-08-18 |
| 5300447 |
Method of manufacturing a minimum scaled transistor |
— |
1994-04-05 |
| 5216265 |
Integrated circuit memory devices with high angle implant around top of trench to reduce gated diode leakage |
William R. McKee, Cishi Chung |
1993-06-01 |
| 5112762 |
High angle implant around top of trench to reduce gated diode leakage |
William R. McKee, Gishi Chung |
1992-05-12 |
| 4958206 |
Diffused bit line trench capacitor dram cell |
Clarence W. Teng, Robert Reid Doering |
1990-09-18 |
| 4922320 |
Integrated circuit metallization with reduced electromigration |
James M. McDavid |
1990-05-01 |
| 4808552 |
Process for making vertically-oriented interconnections for VLSI devices |
— |
1989-02-28 |
| 4751198 |
Process for making contacts and interconnections using direct-reacted silicide |
— |
1988-06-14 |
| 4744858 |
Integrated circuit metallization with reduced electromigration |
James M. McDavid |
1988-05-17 |
| 4589196 |
Contacts for VLSI devices using direct-reacted silicide |
— |
1986-05-20 |