Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11996368 | Pad structure for enhanced bondability | Ru-Ying Huang, Yung Ching Chen, Yian-Liang Kuo | 2024-05-28 |
| 11728279 | Pad structure for enhanced bondability | Ru-Ying Huang, Yung Ching Chen, Yian-Liang Kuo | 2023-08-15 |
| 11227836 | Pad structure for enhanced bondability | Ru-Ying Huang, Yung Ching Chen, Yian-Liang Kuo | 2022-01-18 |
| 10535696 | Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips | Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Shuang-Ji Tsai | 2020-01-14 |
| 9653508 | Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips | Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Shuang-Ji Tsai | 2017-05-16 |
| 9362329 | Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips | Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Shuang-Ji Tsai | 2016-06-07 |
| 9184207 | Pad structures formed in double openings in dielectric layers | Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Shuang-Ji Tsai | 2015-11-10 |
| 9013022 | Pad structure including glue layer and non-low-k dielectric layer in BSI image sensor chips | Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Shuang-Ji Tsai | 2015-04-21 |
| 8987855 | Pad structures formed in double openings in dielectric layers | Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Shuang-Ji Tsai | 2015-03-24 |
| 8664736 | Bonding pad structure for a backside illuminated image sensor device and method of manufacturing the same | Shuang-Ji Tsai, Dun-Nian Yaung, Jen-Cheng Liu, Jeng-Shyan Lin, Wen-De Wang | 2014-03-04 |
| 8435824 | Backside illumination sensor having a bonding pad structure and method of making the same | Shuang-Ji Tsai, Dun-Nian Yaung, Jeng-Shyan Lin, Jen-Cheng Liu, Wen-De Wang | 2013-05-07 |
| 7521741 | Shielding structures for preventing leakages in high voltage MOS devices | Yu-Chang Jong, Ruey-Hsin Liu, Shun-Liang Hsu, Chi-Hsuen Chang, Te-Yin Hsia | 2009-04-21 |