Issued Patents All Time
Showing 226–244 of 244 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6165867 | Method to reduce aspect ratio of DRAM peripheral contact | Cheng-Yuan Hsu, Cheng-Yuan Chang | 2000-12-26 |
| 6147005 | Method of forming dual damascene structures | Liu Yuan-Hung | 2000-11-14 |
| 6143664 | Method of planarizing a structure having an interpoly layer | Liang-Gi Yao, Chung-Ju Lee, Yue Chen, Wei-Ray Lin | 2000-11-07 |
| 6136716 | Method for manufacturing a self-aligned stacked storage node DRAM cell | — | 2000-10-24 |
| 6124182 | Method of forming stacked capacitor | Sian-Min Chung | 2000-09-26 |
| 6117748 | Dishing free process for shallow trench isolation | Chine-Gie Lou, Ko-Hsing Chang | 2000-09-12 |
| 6114198 | Method for forming a high surface area capacitor electrode for DRAM applications | Sen-Huan Huang, Jin-Dong Chern | 2000-09-05 |
| 6107139 | Method for making a mushroom shaped DRAM capacitor | Chine-Gie Lou | 2000-08-22 |
| 6100138 | Method to fabricate DRAM capacitor using damascene processes | — | 2000-08-08 |
| 6100129 | Method for making fin-trench structured DRAM capacitor | Chine-Gie Lou | 2000-08-08 |
| 6096653 | Method for fabricating conducting lines with a high topography height | Kung Linliu | 2000-08-01 |
| 6080664 | Method for fabricating a high aspect ratio stacked contact hole | Sen-Huan Huang, Wan-Yih Lien | 2000-06-27 |
| 6074913 | Method for forming a DRAM capacitor | Chine-Gie Lou | 2000-06-13 |
| 6017614 | Plasma-enhanced chemical vapor deposited SIO.sub.2 /SI.sub.3 N.sub.4 multilayer passivation layer for semiconductor applications | Kwong-Jr Tsai, Shiang-Peng Cheng, Ing-Ruey Liaw | 2000-01-25 |
| 5962344 | Plasma treatment method for PECVD silicon nitride films for improved passivation layers on semiconductor metal interconnections | Shiang-Peng Cheng, Kwong-Jr Tsai, Liang-Gi Yao | 1999-10-05 |
| 5943599 | Method of fabricating a passivation layer for integrated circuits | Liang-Gi Yao, Sen-Huan Huang, Kwong-Jr Tsai, Meng-Jaw Cherng | 1999-08-24 |
| 5932487 | Method for forming a planar intermetal dielectric layer | Chine-Gie Lou | 1999-08-03 |
| 5916823 | Method for making dual damascene contact | Chine-Gie Lou | 1999-06-29 |
| 5851603 | Method for making a plasma-enhanced chemical vapor deposited SiO.sub.2 Si.sub.3 N.sub.4 multilayer passivation layer for semiconductor applications | Kwong-Jr Tsai, Shiang-Peng Cheng, Ing-Ruey Liaw | 1998-12-22 |