IL

Ing-Ruey Liaw

VS Vanguard International Semiconductor: 29 patents #10 of 585Top 2%
IT ITRI: 3 patents #2,499 of 9,619Top 30%
TI Taiwan Imagingtek: 1 patents #4 of 11Top 40%
Overall (All Time): #108,868 of 4,157,543Top 3%
33
Patents All Time

Issued Patents All Time

Showing 1–25 of 33 patents

Patent #TitleCo-InventorsDate
7589990 Semiconductor ROM device and manufacturing method thereof Chih-Ta Star Sung, Thomas Chang 2009-09-15
7129134 Fabrication method for flash memory source line and flash memory Jui-Hsiang Yang, Yue Chen 2006-10-31
6762096 Method for forming a polysilicon spacer with a vertical profile Fsien-Fu Meng, Chyei-Jer Hsieh, Yu-Chen Ho, Hsu-Li Cheng 2004-07-13
6555433 Method of manufacture of a crown or stack capacitor with a monolithic fin structure made with a different oxide etching rate in hydrogen fluoride vapor 2003-04-29
6476437 Crown or stack capacitor with a monolithic fin structure 2002-11-05
6351037 Method for making polycide-to-polycide low contact resistance contacts for interconnections on integrated circuits Meng-Jaw Cherng 2002-02-26
6344392 Methods of manufacture of crown or stack capacitor with a monolithic fin structure made with a different oxide etching rate in hydrogen fluoride vapor 2002-02-05
6277719 Method for fabricating a low resistance Poly-Si/metal gate Jin-Dong Chern, Kwong-Jr Tsai, Randy C. H. Chang 2001-08-21
6249018 Fabrication method to approach the conducting structure of a DRAM cell with straightforward bit line Wen-Jya Liang 2001-06-19
6239014 Tungsten bit line structure featuring a sandwich capping layer 2001-05-29
6171929 Shallow trench isolator via non-critical chemical mechanical polishing Fu-Liang Yang, Chung-Ju Lee, Meow-Ru Hsu, Ming-Hong Kuo 2001-01-09
6168987 Method for fabricating crown-shaped capacitor structures Erik S. Jeng, Rong-Wu Chien 2001-01-02
6150247 Method for making polycide-to-polycide low contact resistance contacts for interconnections on integrated circuits Meng-Jaw Cherng 2000-11-21
6136643 Method for fabricating capacitor-over-bit-line dynamic random access memory (DRAM) using self-aligned contact etching technology Erik S. Jeng, Chun-Yao Chen, Janmye Sung 2000-10-24
6133599 Design and a novel process for formation of DRAM bit line and capacitor node contacts Jan-Mye Sung, Ming-Hong Kuo 2000-10-17
6087253 Method of forming landing plugs for PMOS and NMOS 2000-07-11
6017614 Plasma-enhanced chemical vapor deposited SIO.sub.2 /SI.sub.3 N.sub.4 multilayer passivation layer for semiconductor applications Kwong-Jr Tsai, Shiang-Peng Cheng, Yeur-Luen Tu 2000-01-25
6008085 Design and a novel process for formation of DRAM bit line and capacitor node contacts Janmye Sung, Ming-Hong Kuo 1999-12-28
6008075 Method for simultaneous formation of contacts between metal layers and fuse windows in semiconductor manufacturing Wah-Yih Lien 1999-12-28
5998279 Manufacture of a shallow trench isolation device by exposing negative photoresist to increased exposure energy and chemical mechanical planarization 1999-12-07
5956587 Method for crown type capacitor in dynamic random access memory Li-Yeat Chen 1999-09-21
5923973 Method of making greek letter psi shaped capacitor for DRAM circuits Li-Yeat Chen 1999-07-13
5905293 LDD spacers in MOS devices with double spacers Erik S. Jeng 1999-05-18
5874359 Small contacts for ultra large scale integration semiconductor devices without separation ground rule Jau-Hwang Ho, Meng-Jaw Cherng 1999-02-23
5851603 Method for making a plasma-enhanced chemical vapor deposited SiO.sub.2 Si.sub.3 N.sub.4 multilayer passivation layer for semiconductor applications Kwong-Jr Tsai, Shiang-Peng Cheng, Yeur-Luen Tu 1998-12-22