JS

Janmye Sung

VS Vanguard International Semiconductor: 20 patents #21 of 585Top 4%
AT AT&T: 12 patents #1,455 of 18,772Top 8%
AI At & T Ipm: 2 patents #5 of 189Top 3%
ET Etron Technology: 1 patents #75 of 145Top 55%
📍 Emmaus, PA: #11 of 365 inventorsTop 4%
🗺 Pennsylvania: #1,480 of 74,527 inventorsTop 2%
Overall (All Time): #104,116 of 4,157,543Top 3%
34
Patents All Time

Issued Patents All Time

Showing 1–25 of 34 patents

Patent #TitleCo-InventorsDate
6198121 Method fabricating a DRAM cell with an area equal to four times the used minimum feature 2001-03-06
6180453 Method to fabricate a DRAM cell with an area equal to five times the minimum used feature, squared Chih-Yuan Lu 2001-01-30
6163047 Method of fabricating a self aligned contact for a capacitor over bitline, (COB), memory cell Nicky C. Lu 2000-12-19
6136643 Method for fabricating capacitor-over-bit-line dynamic random access memory (DRAM) using self-aligned contact etching technology Erik S. Jeng, Chun-Yao Chen, Ing-Ruey Liaw 2000-10-24
6137130 Capacitor over bit line structure using a straight bit line shape 2000-10-24
6025227 Capacitor over bit line structure using a straight bit line shape 2000-02-15
6008085 Design and a novel process for formation of DRAM bit line and capacitor node contacts Ing-Ruey Liaw, Ming-Hong Kuo 1999-12-28
6008084 Method for fabricating low resistance bit line structures, along with bit line structures exhibiting low bit line to bit line coupling capacitance 1999-12-28
5943581 Method of fabricating a buried reservoir capacitor structure for high-density dynamic random access memory (DRAM) circuits Chih-Yuan Lu 1999-08-24
5879997 Method for forming self aligned polysilicon contact Kuo-Hua Lee 1999-03-09
5879986 Method for fabrication of a one gigabit capacitor over bit line DRAM cell with an area equal to eight times the used minimum feature 1999-03-09
5858831 Process for fabricating a high performance logic and embedded dram devices on a single semiconductor chip 1999-01-12
5821142 Method for forming a capacitor with a multiple pillar structure Howard C. Kirsch, Chih-Yuan Lu 1998-10-13
5808335 Reduced mask DRAM process 1998-09-15
5792680 Method of forming a low cost DRAM cell with self aligned twin tub CMOS devices and a pillar shaped capacitor Chih-Yuan Lu, Howard C. Kirsch 1998-08-11
5789291 Dram cell capacitor fabrication method 1998-08-04
5753551 Memory cell array with a self-aligned, buried bit line 1998-05-19
5729056 Low cycle time CMOS process 1998-03-17
5679589 FET with gate spacer Kuo-Hua Lee, Chih-Yuan Lu 1997-10-21
5656510 Method for manufacturing gate oxide capacitors including wafer backside dielectric and implantation electron flood gun current control Terry Chrapacz, Kenneth Gordon Moerschel, William A. Possanza, Michael Allen Prozonic 1997-08-12
5573962 Low cycle time CMOS process 1996-11-12
5559360 Inductor for high frequency circuits Tzu-Yin Chiu, Frank M. Erceg, Duk-Young Jeon 1996-09-24
5550078 Reduced mask DRAM process 1996-08-27
5547893 method for fabricating an embedded vertical bipolar transistor and a memory cell 1996-08-20
5488248 Memory integrated circuit Kuo-Hua Lee 1996-01-30