Issued Patents All Time
Showing 126–150 of 205 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10861740 | Method of forming trenches with different depths | Chao-Hsun Wang, Hsien-Cheng Wang | 2020-12-08 |
| 10854615 | FinFET having non-merging epitaxially grown source/drains | Chun Po Chang, Chen-Ming Lee, Fu-Kai Yang, Wei-Yang Lee, Tzu-Hsiang Hsu | 2020-12-01 |
| 10825737 | Prevention of contact bottom void in semiconductor fabrication | Yun Lee, Chung-Ting Ko, Chen-Ming Lee, Fu-Kai Yang | 2020-11-03 |
| 10797050 | Fin field effect transistor (finFET) device structure with capping layer and method for forming the same | Chun-Han Chen, Chen-Ming Lee, Fu-Kai Yang, Jr-Hung Li, Bo-Cyuan Lu | 2020-10-06 |
| 10790197 | Semiconductor arrangement and formation thereof | I-Wen Wu, Hsien-Cheng Wang, Shih-Wen Liu, Chao-Hsun Wang, Yun-Han Lee | 2020-09-29 |
| 10755945 | Metal contacts on metal gates and methods thereof | Pang-Sheng Chang, Yu-Feng Yin, Chao-Hsun Wang, Kuo-Yi Chao, Fu-Kai Yang +9 more | 2020-08-25 |
| 10727068 | Method for manufacturing semiconductor structure with mask structure | Hsin-Ying Lin, Hsien-Cheng Wang, Fu-Kai Yang, Shih-Wen Liu, Hsiao-Chiu Hsu | 2020-07-28 |
| 10685880 | Methods for reducing contact depth variation in semiconductor fabrication | Yun Lee, Chen-Ming Lee, Fu-Kai Yang, Yi-Jyun Huang, Sheng-Hsiung Wang | 2020-06-16 |
| 10651178 | Compact electrical connection that can be used to form an SRAM cell and method of making the same | Yu-Kuan Lin, Chang-Ta Yang, Ping-Wei Wang, Kuo-Yi Chao | 2020-05-12 |
| 10636697 | Contact formation method and related structure | Chao-Hsun Wang, Wang-Jung Hsueh, Kuo-Yi Chao | 2020-04-28 |
| 10546755 | Semiconductor device and a method for fabricating the same | Chen-Ming Lee, Fu-Kai Yang | 2020-01-28 |
| 10535555 | Contact plugs and methods forming same | Chao-Hsun Wang, Fu-Kai Yang, Kuo-Yi Chao | 2020-01-14 |
| 10510614 | Semiconductor arrangement and formation thereof | I-Wen Wu, Hsien-Cheng Wang, Shih-Wen Liu, Chao-Hsun Wang, Yun-Han Lee | 2019-12-17 |
| 10505045 | Fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contact | Chao-Hsun Wang, Kuo-Yi Chao, Rueijer Lin, Chen-Yuan Kao | 2019-12-10 |
| 10504990 | Isolation features and methods of fabricating the same | I-Wen Wu, Fu-Kai Yang, Chen-Ming Lee, Jr-Hung Li, Bo-Cyuan Lu | 2019-12-10 |
| 10490459 | Method for source/drain contact formation in semiconductor devices | Shao-Ming Koh, Chen-Ming Lee, I-Wen Wu, Fu-Kai Yang, Jia-Heng Wang | 2019-11-26 |
| 10475788 | Fin field effect transistor (FinFET) device structure with capping layer and method for forming the same | Chun-Han Chen, Chen-Ming Lee, Fu-Kai Yang, Jr-Hung Li, Bo-Cyuan Lu | 2019-11-12 |
| 10468257 | Mechanisms for semiconductor device structure | Hsin-Ying Lin, Hsien-Cheng Wang, Fu-Kai Yang, Shih-Wen Liu, Audrey Hsiao-Chiu Hsu | 2019-11-05 |
| 10418453 | Forming metal contacts on metal gates | Chao-Hsun Wang, Yu-Feng Yin, Kuo-Yi Chao, Feng-Yu Chang, Chen-Yuan Kao | 2019-09-17 |
| 10283403 | Method of forming trenches with different depths | Chao-Hsun Wang, Hsien-Cheng Wang | 2019-05-07 |
| 10276448 | Semiconductor arrangement and formation thereof | I-Wen Wu, Hsien-Cheng Wang, Shih-Wen Liu, Chao-Hsun Wang, Yun-Han Lee | 2019-04-30 |
| 10276437 | Contact structure of gate structure | Audrey Hsiao-Chiu Hsu, Fu-Kai Yang, Hsien-Cheng Wang, Shih-Wen Liu, Hsin-Ying Lin | 2019-04-30 |
| 10269621 | Contact plugs and methods forming same | Chao-Hsun Wang, Fu-Kai Yang, Kuo-Yi Chao | 2019-04-23 |
| 10177038 | Prevention of contact bottom void in semiconductor fabrication | Yun Lee, Chung-Ting Ko, Chen-Ming Lee, Fu-Kai Yang | 2019-01-08 |
| 10163703 | Method for forming self-aligned contact | Chao-Hsun Wang, Shih-Wen Liu, Fu-Kai Yang, Hsien-Cheng Wang | 2018-12-25 |