Issued Patents All Time
Showing 1–25 of 59 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12406907 | Semiconductor structure with conductive_structure | Jia-Heng Wang, Pang-Chi Wu, Fu-Kai Yang, Mei-Yun Wang | 2025-09-02 |
| 12389646 | Semiconductor transistor structure with nanostructures and conductive structure and method for manufacturing the same | Jia-Heng Wang, Pang-Chi Wu, Fu-Kai Yang, Mei-Yun Wang | 2025-08-12 |
| 12363947 | Structure and formation method of semiconductor device with contact structures | Shih-Chieh Wu, Pang-Chi Wu, Wang-Jung Hsueh, Kuo-Yi Chao, Mei-Yun Wang +2 more | 2025-07-15 |
| 12342598 | Forming metal contacts on metal gates | Yu-Feng Yin, Kuo-Yi Chao, Mei-Yun Wang, Feng-Yu Chang, Chen-Yuan Kao | 2025-06-24 |
| 12278188 | Different via configurations for different via interface requirements | Shih-Che Lin, Po-Yu Huang, Kuo-Yi Chao, Mei-Yun Wang, Feng-Yu Chang +3 more | 2025-04-15 |
| 12266703 | Dielectric structures for semiconductor device structures | Shih-Che Lin, Po-Yu Huang, I-Wen Wu, Chen-Ming Lee, Chia-Hsien Yao +2 more | 2025-04-01 |
| 12243940 | Methods of forming air spacers in semiconductor devices | Chen-Ming Lee, Kuo-Yi Chao, Mei-Yun Wang, Pei-Yu Chou, Kuo-Ju Chen | 2025-03-04 |
| 12211787 | Interconnect structures and methods of fabrication thereof | Wang-Jung Hsueh, Fu-Kai Yang, Mei-Yun Wang, Sheng-Hsiung Wang, Shih-Hsien Huang | 2025-01-28 |
| 12176435 | Method for forming fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contact | Kuo-Yi Chao, Rueijer Lin, Chen-Yuan Kao, Mei-Yun Wang | 2024-12-24 |
| 12159908 | Semiconductor device and fabrication method thereof | Ming-Hong Chang | 2024-12-03 |
| 12142565 | Different via configurations for different via interface requirements | Shih-Che Lin, Po-Yu Huang, Kuo-Yi Chao, Mei-Yun Wang, Feng-Yu Chang +3 more | 2024-11-12 |
| 12125743 | Via-first process for connecting a contact and a gate electrode | Mei-Yun Wang, Kuo-Yi Chao, Wang-Jung Hsueh | 2024-10-22 |
| 12107166 | Fin field effect transistor (FinFET) device structure with isolation layer and method for forming the same | Chung-Huai CHANG, Kuo-Yi Chao, Mei-Yun Wang | 2024-10-01 |
| 12074063 | Contact formation method and related structure | Shih-Che Lin, Chia-Hsien Yao, Fu-Kai Yang, Mei-Yun Wang | 2024-08-27 |
| 12057392 | Conductive features having varying resistance | Jia-En Lee, Po-Yu Huang, Shih-Che Lin, Kuo-Yi Chao, Mei-Yun Wang +1 more | 2024-08-06 |
| 11978664 | Polishing interconnect structures in semiconductor devices | Pang-Sheng Chang, Kuo-Yi Chao, Fu-Kai Yang, Mei-Yun Wang, Li-Chieh Wu +1 more | 2024-05-07 |
| 11961886 | Semiconductor structure with conductive structure | Jia-Heng Wang, Pang-Chi Wu, Fu-Kai Yang, Mei-Yun Wang | 2024-04-16 |
| 11915971 | Contact formation method and related structure | Wang-Jung Hsueh, Kuo-Yi Chao, Mei-Yun Wang | 2024-02-27 |
| 11901426 | Forming metal contacts on metal gates | Yu-Feng Yin, Kuo-Yi Chao, Mei-Yun Wang, Feng-Yu Chang, Chen-Yuan Kao | 2024-02-13 |
| 11855154 | Vertical interconnect features and methods of forming | Po-Yu Huang, Shih-Che Lin, Kuo-Yi Chao, Mei-Yun Wang, Feng-Yu Chang +2 more | 2023-12-26 |
| 11682729 | Methods of forming air spacers in semiconductor devices | Chen-Ming Lee, Kuo-Yi Chao, Mei-Yun Wang, Pei-Yu Chou, Kuo-Ju Chen | 2023-06-20 |
| 11682579 | Method of forming trenches with different depths | Hsien-Cheng Wang, Mei-Yun Wang | 2023-06-20 |
| 11670544 | Via-first process for connecting a contact and a gate electrode | Mei-Yun Wang, Kuo-Yi Chao, Wang-Jung Hsueh | 2023-06-06 |
| 11640936 | Interconnect structures and methods of fabrication thereof | Wang-Jung Hsueh, Fu-Kai Yang, Mei-Yun Wang, Sheng-Hsiung Wang, Shih-Hsien Huang | 2023-05-02 |
| 11532561 | Different via configurations for different via interface requirements | Shih-Che Lin, Po-Yu Huang, Kuo-Yi Chao, Mei-Yun Wang, Feng-Yu Chang +3 more | 2022-12-20 |