Issued Patents All Time
Showing 26–50 of 59 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11532717 | Forming metal contacts on metal gates | Yu-Feng Yin, Kuo-Yi Chao, Mei-Yun Wang, Feng-Yu Chang, Chen-Yuan Kao | 2022-12-20 |
| 11527614 | Semiconductor structure with conductive structure and method for manufacturing the same | Jia-Heng Wang, Pang-Chi Wu, Fu-Kai Yang, Mei-Yun Wang | 2022-12-13 |
| 11508822 | Source/drain via having reduced resistance | Po-Yu Huang, Shih-Che Lin, Kuo-Yi Chao, Mei-Yun Wang | 2022-11-22 |
| 11430691 | Polishing interconnect structures in semiconductor devices | Pang-Sheng Chang, Kuo-Yi Chao, Fu-Kai Yang, Mei-Yun Wang, Li-Chieh Wu +1 more | 2022-08-30 |
| 11348830 | Method of forming trenches with different depths | Hsien-Cheng Wang, Mei-Yun Wang | 2022-05-31 |
| 11322394 | Contact formation method and related structure | Wang-Jung Hsueh, Kuo-Yi Chao, Mei-Yun Wang | 2022-05-03 |
| 11271112 | Method for forming fin field effect transistor (FINFET) device structure with conductive layer between gate and gate contact | Kuo-Yi Chao, Rueijer Lin, Chen-Yuan Kao, Mei-Yun Wang | 2022-03-08 |
| 11227950 | Methods of forming air spacers in semiconductor devices | Chen-Ming Lee, Kuo-Yi Chao, Mei-Yun Wang, Pei-Yu Chou, Kuo-Ju Chen | 2022-01-18 |
| 11227830 | Conductive features having varying resistance | Jia-En Lee, Po-Yu Huang, Shih-Che Lin, Kuo-Yi Chao, Mei-Yun Wang +1 more | 2022-01-18 |
| 11189525 | Via-first process for connecting a contact and a gate electrode | Mei-Yun Wang, Kuo-Yi Chao, Wang-Jung Hsueh | 2021-11-30 |
| 11177212 | Contact formation method and related structure | Po-Yu Huang, Shih-Che Lin, Kuo-Yi Chao, Mei-Yun Wang | 2021-11-16 |
| 11127684 | Low-resistance interconnect structures | Wang-Jung Hsueh, Kuo-Yi Chao, Mei-Yun Wang, Ru-Gun Liu | 2021-09-21 |
| 11107896 | Vertical interconnect features and methods of forming | Po-Yu Huang, Shih-Che Lin, Kuo-Yi Chao, Mei-Yun Wang, Feng-Yu Chang +2 more | 2021-08-31 |
| 10950728 | Fin field effect transistor (FinFET) device structure with isolation layer and method for forming the same | Chung-Huai CHANG, Kuo-Yi Chao, Mei-Yun Wang | 2021-03-16 |
| 10923573 | Forming metal contacts on metal gates | Yu-Feng Yin, Kuo-Yi Chao, Mei-Yun Wang, Feng-Yu Chang, Chen-Yuan Kao | 2021-02-16 |
| 10861740 | Method of forming trenches with different depths | Hsien-Cheng Wang, Mei-Yun Wang | 2020-12-08 |
| 10790197 | Semiconductor arrangement and formation thereof | I-Wen Wu, Hsien-Cheng Wang, Mei-Yun Wang, Shih-Wen Liu, Yun-Han Lee | 2020-09-29 |
| 10755945 | Metal contacts on metal gates and methods thereof | Pang-Sheng Chang, Yu-Feng Yin, Kuo-Yi Chao, Fu-Kai Yang, Mei-Yun Wang +9 more | 2020-08-25 |
| 10636697 | Contact formation method and related structure | Wang-Jung Hsueh, Kuo-Yi Chao, Mei-Yun Wang | 2020-04-28 |
| 10535555 | Contact plugs and methods forming same | Fu-Kai Yang, Mei-Yun Wang, Kuo-Yi Chao | 2020-01-14 |
| 10510614 | Semiconductor arrangement and formation thereof | I-Wen Wu, Hsien-Cheng Wang, Mei-Yun Wang, Shih-Wen Liu, Yun-Han Lee | 2019-12-17 |
| 10505045 | Fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contact | Kuo-Yi Chao, Rueijer Lin, Chen-Yuan Kao, Mei-Yun Wang | 2019-12-10 |
| 10418453 | Forming metal contacts on metal gates | Yu-Feng Yin, Kuo-Yi Chao, Mei-Yun Wang, Feng-Yu Chang, Chen-Yuan Kao | 2019-09-17 |
| 10283403 | Method of forming trenches with different depths | Hsien-Cheng Wang, Mei-Yun Wang | 2019-05-07 |
| 10276448 | Semiconductor arrangement and formation thereof | I-Wen Wu, Hsien-Cheng Wang, Mei-Yun Wang, Shih-Wen Liu, Yun-Han Lee | 2019-04-30 |