Issued Patents All Time
Showing 1–25 of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12380958 | Semiconductor memory structure | Hsin-Wen Su, Kian-Long Lim, Wen-Chun Keng, Shih-Hao Lin | 2025-08-05 |
| 12376277 | Compact electrical connection that can be used to form an SRAM cell and method of making the same | Yu-Kuan Lin, Ping-Wei Wang, Kuo-Yi Chao, Mei-Yun Wang | 2025-07-29 |
| 12274045 | Well pick-up region design for improving memory macro performance | Chih-Chuan Yang, Ping-Wei Wang | 2025-04-08 |
| 12142684 | Cut metal gate in memory macro edge and middle strap | Hsin-Wen Su, Yu-Kuan Lin, Chih-Chuan Yang, Shih-Hao Lin | 2024-11-12 |
| 12080602 | Semiconductor device with fin structures | Wen-Chun Keng, Yu-Kuan Lin, Ping-Wei Wang | 2024-09-03 |
| 12057505 | Semiconductor device having fin structures | Yu-Kuan Lin, Ping-Wei Wang | 2024-08-06 |
| 11948829 | FinFET circuit devices with well isolation | Chih-Chuan Yang | 2024-04-02 |
| 11942169 | Semiconductor memory structure | Hsin-Wen Su, Kian-Long Lim, Wen-Chun Keng, Shih-Hao Lin | 2024-03-26 |
| 11910585 | Well pick-up region design for improving memory macro performance | Chih-Chuan Yang, Ping-Wei Wang | 2024-02-20 |
| 11864368 | Static random access memory cell | Jordan Hsu, Yu-Kuan Lin, Shau-Wei Lu, Ping-Wei Wang, Kuo-Hung Lo | 2024-01-02 |
| 11856745 | Compact electrical connection that can be used to form an SRAM cell and method of making the same | Yu-Kuan Lin, Ping-Wei Wang, Kuo-Yi Chao, Mei-Yun Wang | 2023-12-26 |
| 11728432 | Cut metal gate in memory macro edge and middle strap | Hsin-Wen Su, Yu-Kuan Lin, Chih-Chuan Yang, Shih-Hao Lin | 2023-08-15 |
| 11710663 | Semiconductor device with fin structures | Wen-Chun Keng, Yu-Kuan Lin, Ping-Wei Wang | 2023-07-25 |
| 11641729 | Manufacturing method of static random access memory cell | Jordan Hsu, Yu-Kuan Lin, Shau-Wei Lu, Ping-Wei Wang, Kuo-Hung Lo | 2023-05-02 |
| 11621267 | Compact electrical connection that can be used to form an SRAM cell and method of making the same | Yu-Kuan Lin, Ping-Wei Wang, Kuo-Yi Chao, Mei-Yun Wang | 2023-04-04 |
| 11600623 | Well pick-up region design for improving memory macro performance | Chih-Chuan Yang, Ping-Wei Wang | 2023-03-07 |
| 11462282 | Semiconductor memory structure | Hsin-Wen Su, Kian-Long Lim, Wen-Chun Keng, Shih-Hao Lin | 2022-10-04 |
| 11387240 | Compact electrical connection that can be used to form an SRAM cell and method of making the same | Yu-Kuan Lin, Ping-Wei Wang, Kuo-Yi Chao, Mei-Yun Wang | 2022-07-12 |
| 11355499 | Static random access memory cell | Jordan Hsu, Yu-Kuan Lin, Shau-Wei Lu, Ping-Wei Wang, Kuo-Hung Lo | 2022-06-07 |
| 11264268 | FinFET circuit devices with well isolation | Chih-Chuan Yang | 2022-03-01 |
| 11121078 | SRAM having irregularly shaped metal lines | Jui-Lin Chen, Chao-Yuan Chang, Yu-Kuan Lin, Ping-Wei Wang | 2021-09-14 |
| 11056594 | Semiconductor device having fin structures | Yu-Kuan Lin, Ping-Wei Wang | 2021-07-06 |
| 11043595 | Cut metal gate in memory macro edge and middle strap | Hsin-Wen Su, Yu-Kuan Lin, Chih-Chuan Yang, Shih-Hao Lin | 2021-06-22 |
| 10943827 | Semiconductor device with fin structures | Wen-Chun Keng, Yu-Kuan Lin, Ping-Wei Wang | 2021-03-09 |
| 10727343 | Semiconductor device having fin structures | Yu-Kuan Lin, Ping-Wei Wang | 2020-07-28 |