JH

Jenn Ming Huang

TSMC: 67 patents #463 of 12,232Top 4%
📍 Baoshan, TW: #15 of 3,661 inventorsTop 1%
Overall (All Time): #31,295 of 4,157,543Top 1%
68
Patents All Time

Issued Patents All Time

Showing 26–50 of 68 patents

Patent #TitleCo-InventorsDate
6127260 Method of forming a tee shaped tungsten plug structure to avoid high aspect ratio contact holes in embedded DRAM devices 2000-10-03
6117725 Method for making cost-effective embedded DRAM structures compatible with logic circuit processing 2000-09-12
6117723 Salicide integration process for embedded DRAM devices 2000-09-12
6103622 Silicide process for mixed mode product with dual layer capacitor and polysilicon resistor which is protected with a capacitor protective oxide during silicidation of FET device 2000-08-15
6103621 Silicide process for mixed mode product with dual layer capacitor which is protected by a capacitor protective oxide during silicidation of FET device 2000-08-15
6100118 Fabrication of metal fuse design for redundancy technology having a guard ring Cheng-Yeh Shih 2000-08-08
6100116 Method to form a protected metal fuse Yu-Hua Lee, James C. Wu, Cheng-Yeh Shih, Min-Hsiung Chiang 2000-08-08
6096595 Integration of a salicide process for MOS logic devices, and a self-aligned contact process for MOS memory devices 2000-08-01
6093640 Overlay measurement improvement between damascene metal interconnections Jung-Hsien Hsu 2000-07-25
6074908 Process for making merged integrated circuits having salicide FETS and embedded DRAM circuits 2000-06-13
6042999 Robust dual damascene process Cheng-Tung Lin, Yu-Hua Lee, Cheng-Ming Wu 2000-03-28
6037222 Method for fabricating a dual-gate dielectric module for memory embedded logic using salicide technology and polycide technology Kuo-Ching Huang, Tse-Liang Ying, Chen-Jong Wang 2000-03-14
6037199 SOI device for DRAM cells beyond gigabit generation and method for making the same Jin-Yuan Lee 2000-03-14
6033999 Method of solving contact oblique problems of an ILD layer using a rapid thermal anneal Jann-Ming Wu, Min-Hsiung Chiang, Ming-Ta Lei 2000-03-07
6033963 Method of forming a metal gate for CMOS devices using a replacement gate process Chi-Wen Su, Chung-Cheng Wu, Shui-Hung Chen 2000-03-07
6025279 Method of reducing nitride and oxide peeling after planarization using an anneal Min-Hsiung Chiang, Chen-Jong Wang 2000-02-15
6015735 Method for forming a multi-anchor DRAM capacitor and capacitor formed Shau-Lin Shue, Hun-Jan Tao, Chia-Shiung Tsai 2000-01-18
6015730 Integration of SAC and salicide processes by combining hard mask and poly definition Chen-Jong Wang, Chue-San Yoo 2000-01-18
6004843 Process for integrating a MOS logic device and a MOS memory device on a single semiconductor chip 1999-12-21
6001721 Silicide and salicide on the same chip 1999-12-14
5998269 Technology for high performance buried contact and tungsten polycide gate integration Kuo-Ching Huang, Shou-Gwo Wuu, Dun-Nian Yaung 1999-12-07
5998252 Method of salicide and sac (self-aligned contact) integration 1999-12-07
5989966 Method and a deep sub-micron field effect transistor structure for suppressing short channel effects 1999-11-23
5989954 Method for forming a cylinder capacitor in the dram process Yu-Hua Lee 1999-11-23
5963839 Reduction of polysilicon contact resistance by nitrogen implantation 1999-10-05