YL

Yu-Hua Lee

TSMC: 41 patents #828 of 12,232Top 7%
IT ITRI: 2 patents #3,461 of 9,619Top 40%
📍 Baoshan, TW: #41 of 3,661 inventorsTop 2%
Overall (All Time): #68,460 of 4,157,543Top 2%
44
Patents All Time

Issued Patents All Time

Showing 1–25 of 44 patents

Patent #TitleCo-InventorsDate
7482278 Key-hole free process for high aspect ratio gap filling with reentrant spacer Tze-Liang Ying, James Wu, Wen-Chuan Chiang 2009-01-27
7160811 Laminated silicate glass layer etch stop method for fabricating microelectronic product Yen-Ming Chen, Huan Chi Tseng, Dian-Hau Chen, Chia-Hung Lai, Kang-Min Kuo 2007-01-09
7056821 Method for manufacturing dual damascene structure with a trench formed first Chin-Tien Yang, Juan-Jann Jou, Chia-Hung Lai 2006-06-06
7015129 Bond pad scheme for Cu process Chia-Hung Lai, Jiunn-Jyi Lin, Tzong-Sheng Chang, Min Cao, Huan Chi Tseng +1 more 2006-03-21
6956254 Multilayered dual bit memory device with improved write/erase characteristics and method of manufacturing Chin-Tien Yang, Mu-Yi Lin, Yu-Wei Tseng, Min Ca 2005-10-18
6844626 Bond pad scheme for Cu process Chia-Hung Lai, Jiunn-Jyi Lin, Tzong-Sheng Chang, Min Cao, Huan Chi Tseng +1 more 2005-01-18
6600228 Keyhole at the top metal level prefilled with photoresist to prevent passivation damage even for a severe top metal rule Min-Hsiung Chiang, Jenn Ming Huang 2003-07-29
6586162 Simple photo development step to form TiSix gate in DRAM process 2003-07-01
6555435 Method to eliminate shorts between adjacent contacts due to interlevel dielectric voids Ming-Hsiung Chiang, James Wu 2003-04-29
6436763 Process for making embedded DRAM circuits having capacitor under bit-line (CUB) Jenn Ming Huang, Cheng-Ming Wu 2002-08-20
6403416 Method for making a double-cylinder-capacitor structure for dynamic random access memory (DRAM) Kuo-Ching Huang, James Wu, Wen-Chuan Chiang 2002-06-11
6365464 Method to eliminate shorts between adjacent contacts due to interlevel dielectric voids Ming-Hsiung Chiang, James Wu 2002-04-02
6323118 Borderless dual damascene contact Cheng-Yeh Shih, James Wu 2001-11-27
6307213 Method for making a fuse structure for improved repaired yields on semiconductor memory devices Kuo-Ching Huang, Tse-Liang Ying, Cheng-Yeh Shih, Cheng-Ming Wu 2001-10-23
6294456 Method of prefilling of keyhole at the top metal level with photoresist to prevent passivation damage even for a severe top metal rule Min-Hsiung Chiang, Jenn Ming Huang 2001-09-25
6274426 Self-aligned contact process for a crown shaped dynamic random access memory capacitor structure James Wu, Min-Hsiung Chiang 2001-08-14
6265315 Method for improving chemical/mechanical polish uniformity over rough topography for semiconductor integrated circuits James Wu 2001-07-24
6235580 Process for forming a crown shaped capacitor structure for a DRAM device Cheng-Ming Wu, Wen-Chuan Chiang 2001-05-22
6228736 Modified method for forming cylinder-shaped capacitors for dynamic random access memory (DRAM) James Wu 2001-05-08
6194234 Method to evaluate hemisperical grain (HSG) polysilicon surface Kuo-Ching Huang, Tse-Liang Ying, Wen-Chuan Chiang 2001-02-27
6187659 Node process integration technology to improve data retention for logic based embedded dram Tse-Liang Ying, Wen-Chuan Chiang, Cheng-Ming Wu 2001-02-13
6165839 Process to fabricate a cylindrical, capacitor structure under a bit line structure for a dynamic random access memory cell Cheng-Ming Wu, Wen-Chuan Chiang 2000-12-26
6162686 Method for forming a fuse in integrated circuit application Kuo-Ching Huang, Tse-Liang Ying, Ming Li 2000-12-19
6136695 Method for fabricating a self-aligned contact Cheng-Ming Wu, Ming-Hsiung Chiang 2000-10-24
6121073 Method for making a fuse structure for improved repaired yields on semiconductor memory devices Kuo-Ching Huang, Tse-Liang Ying, Cheng-Yeh Shih, Cheng-Ming Wu 2000-09-19