Issued Patents All Time
Showing 26–50 of 90 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12075626 | Memory window of MFM MOSFET for small cell size | Yi Yang Wei, Bi-Shen Lee, Fa-Shen Jiang, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-08-27 |
| 12075636 | Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same | Fa-Shen Jiang, Hsia-Wei Chen, Hsun-Chung Kuang | 2024-08-27 |
| 12069971 | Switching layer scheme to enhance RRAM performance | Cheng-Yuan Tsai, Hsing-Lien Lin, Wen-Ting Chu | 2024-08-20 |
| 12035537 | Interface film to mitigate size effect of memory device | Bi-Shen Lee, Yi Yang Wei, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-07-09 |
| 11991937 | Semiconductor device and method for manufacturing the same | Hsing-Lien Lin, Fa-Shen Jiang | 2024-05-21 |
| 11967611 | Multilayer structure, capacitor structure and electronic device | Yi Yang Wei, Fa-Shen Jiang, Bi-Shen Lee, Hsun-Chung Kuang | 2024-04-23 |
| 11961545 | Circuit design and layout with high embedded memory density | Fa-Shen Jiang, Hsia-Wei Chen, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-04-16 |
| 11963468 | Rram structure | Chii-Ming Wu, Hsing-Lien Lin, Fa-Shen Jiang | 2024-04-16 |
| 11916127 | Multi-layer electrode to improve performance of ferroelectric memory device | Yi Yang Wei, Bi-Shen Lee, Hsin-Yu Lai, Hsing-Lien Lin, Hsun-Chung Kuang | 2024-02-27 |
| 11895933 | Resistive memory cell with switching layer comprising one or more dopants | Fa-Shen Jiang, Cheng-Yuan Tsai, Hsing-Lien Lin, Hsun-Chung Kuang, Bi-Shen Lee | 2024-02-06 |
| 11856801 | Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same | Fa-Shen Jiang, Hsia-Wei Chen, Hsun-Chung Kuang | 2023-12-26 |
| 11844226 | FeRAM with laminated ferroelectric film and method forming same | Bi-Shen Lee, Yi Yang Wei, Hsing-Lien Lin, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2023-12-12 |
| 11778931 | Diffusion barrier layer in programmable metallization cell | Albert Zhong, Cheng-Yuan Tsai, Shing-Chyang Pan | 2023-10-03 |
| 11758830 | Memory device structure with protective element | Hsing-Lien Lin, Cheng-Yuan Tsai | 2023-09-12 |
| 11737280 | Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layer | Bi-Shen Lee, Tzu-Yu Lin, Yi Yang Wei, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2023-08-22 |
| 11723212 | Memory window of MFM MOSFET for small cell size | Yi Yang Wei, Bi-Shen Lee, Fa-Shen Jiang, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2023-08-08 |
| 11716913 | Data storage structure for improving memory cell reliability | Chii-Ming Wu, Cheng-Yuan Tsai, Tzu-Chung Tsai, Fa-Shen Jiang | 2023-08-01 |
| 11683999 | Switching layer scheme to enhance RRAM performance | Cheng-Yuan Tsai, Hsing-Lien Lin, Wen-Ting Chu | 2023-06-20 |
| 11665909 | FeRAM with laminated ferroelectric film and method forming same | Bi-Shen Lee, Yi Yang Wei, Hsing-Lien Lin, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2023-05-30 |
| 11610927 | Capping structure along image sensor element to mitigate damage to active layer | Chun-Kai Lan, Hsun-Chung Kuang | 2023-03-21 |
| 11594678 | Diffusion barrier layer in programmable metallization cell | Albert Zhong, Cheng-Yuan Tsai, Shing-Chyang Pan | 2023-02-28 |
| 11545202 | Circuit design and layout with high embedded memory density | Fa-Shen Jiang, Hsia-Wei Chen, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2023-01-03 |
| 11532511 | Method for forming semiconductor structure | Gung-Pei Chang, Yao-Wen Chang | 2022-12-20 |
| 11532698 | Diffusion barrier layer in top electrode to increase break down voltage | Hsing-Lien Lin, Chii-Ming Wu, Fa-Shen Jiang | 2022-12-20 |
| 11527713 | Top electrode via with low contact resistance | Bi-Shen Lee, Hsun-Chung Kuang, Tzu-Chung Tsai, Yao-Wen Chang | 2022-12-13 |