CK

Chih-Hsin Ko

TSMC: 196 patents #80 of 12,232Top 1%
NU National Central University: 1 patents #242 of 733Top 35%
📍 Fongshan, TW: #1 of 30 inventorsTop 4%
Overall (All Time): #3,496 of 4,157,543Top 1%
196
Patents All Time

Issued Patents All Time

Showing 101–125 of 196 patents

Patent #TitleCo-InventorsDate
9390982 CMOS devices with reduced leakage and methods of forming the same Cheng-Hsien Wu, Clement Hsingjen Wann, Yi-Jing Lee 2016-07-12
9373549 Semiconductor device and method of forming the same Clement Hsingjen Wann, Chih-Hao Chang, Shou-Zen Chang, Yasutoshi Okuno, Andrew Joseph Kelly 2016-06-21
9343412 Method of forming MOSFET structure Ching-Feng Fu, Yu-Chan Yen, Chun-Hung Lee, Huan-Just Lin, Hui-Cheng Chang 2016-05-17
9337304 Method of making semiconductor device Cheng-Hsien Wu, Clement Hsingjen Wann 2016-05-10
9287138 FinFET low resistivity contact formation method Sung-Li Wang, Ding-Kang Shih 2016-03-15
9276117 Structure and method and FinFET device Yi-Jing Lee, Cheng-Hsien Wu, Pang-Yen Tsai, Tze-Liang Lee 2016-03-01
9246004 Strained structures of semiconductor devices Cheng-Hsien Wu, Clement Hsingjen Wann 2016-01-26
9224734 CMOS devices with reduced leakage and methods of forming the same Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann 2015-12-29
9209066 Isolation structure of semiconductor device Shu-Han Chen, Cheng-Hsien Wu, Clement Hsingjen Wann 2015-12-08
9209023 Growing III-V compound semiconductors from trenches filled with intermediate layers Clement Hsingjen Wann, Cheng-Hsien Wu 2015-12-08
9196709 Methods for forming semiconductor regions in trenches Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann 2015-11-24
9184050 Inverted trapezoidal recess for epitaxial growth Clement Hsingjen Wann, Cheng-Hsien Wu 2015-11-10
9177792 Reverse tone STI formation and epitaxial growth of semiconductor between STI regions Kai-Tai Chang, Yi-Shan Chen, Hsin-Chih Chen, Clement Hsingjen Wann 2015-11-03
9159824 FinFETs with strained well regions Yi-Jing Lee, Chi-Wen Liu, Cheng-Hsien Wu, Clement Hsingjen Wann 2015-10-13
9153582 Apparatus and method for FinFETs Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Cheng-Hsien Wu 2015-10-06
9147594 Method for fabricating a strained structure Tsung-Lin Lee, Chih-Hao Chang, Feng Yuan, Jeff J. Xu 2015-09-29
9123633 Methods for forming semiconductor regions in trenches Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann 2015-09-01
9123546 Multi-layer semiconductor device structures with different channel materials Yi-Tang Lin, Clement Hsingjen Wann 2015-09-01
9105654 Source/drain profile for FinFET Ta-Chun Ma, Cheng-Hsien Wu, Clement Hsingjen Wann 2015-08-11
9087902 FinFETs with strained well regions Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann 2015-07-21
9076819 Contact structure of semiconductor device Cheng-Hsien Wu, Clement Hsingjen Wann 2015-07-07
9006788 Source/drain re-growth for manufacturing III-V based transistors Clement Hsingjen Wann 2015-04-14
8994002 FinFET having superlattice stressor Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Cheng-Hsien Wu 2015-03-31
8969156 Semiconductor structures and methods with high mobility and high energy bandgap materials Cheng-Hsien Wu, Clement Hsingjen Wann 2015-03-03
8962400 In-situ doping of arsenic for source and drain epitaxy Ji-Yin Tsai, Yao-Tsung Huang, Clement Hsingjen Wann 2015-02-24