Issued Patents All Time
Showing 101–125 of 196 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9390982 | CMOS devices with reduced leakage and methods of forming the same | Cheng-Hsien Wu, Clement Hsingjen Wann, Yi-Jing Lee | 2016-07-12 |
| 9373549 | Semiconductor device and method of forming the same | Clement Hsingjen Wann, Chih-Hao Chang, Shou-Zen Chang, Yasutoshi Okuno, Andrew Joseph Kelly | 2016-06-21 |
| 9343412 | Method of forming MOSFET structure | Ching-Feng Fu, Yu-Chan Yen, Chun-Hung Lee, Huan-Just Lin, Hui-Cheng Chang | 2016-05-17 |
| 9337304 | Method of making semiconductor device | Cheng-Hsien Wu, Clement Hsingjen Wann | 2016-05-10 |
| 9287138 | FinFET low resistivity contact formation method | Sung-Li Wang, Ding-Kang Shih | 2016-03-15 |
| 9276117 | Structure and method and FinFET device | Yi-Jing Lee, Cheng-Hsien Wu, Pang-Yen Tsai, Tze-Liang Lee | 2016-03-01 |
| 9246004 | Strained structures of semiconductor devices | Cheng-Hsien Wu, Clement Hsingjen Wann | 2016-01-26 |
| 9224734 | CMOS devices with reduced leakage and methods of forming the same | Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann | 2015-12-29 |
| 9209066 | Isolation structure of semiconductor device | Shu-Han Chen, Cheng-Hsien Wu, Clement Hsingjen Wann | 2015-12-08 |
| 9209023 | Growing III-V compound semiconductors from trenches filled with intermediate layers | Clement Hsingjen Wann, Cheng-Hsien Wu | 2015-12-08 |
| 9196709 | Methods for forming semiconductor regions in trenches | Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann | 2015-11-24 |
| 9184050 | Inverted trapezoidal recess for epitaxial growth | Clement Hsingjen Wann, Cheng-Hsien Wu | 2015-11-10 |
| 9177792 | Reverse tone STI formation and epitaxial growth of semiconductor between STI regions | Kai-Tai Chang, Yi-Shan Chen, Hsin-Chih Chen, Clement Hsingjen Wann | 2015-11-03 |
| 9159824 | FinFETs with strained well regions | Yi-Jing Lee, Chi-Wen Liu, Cheng-Hsien Wu, Clement Hsingjen Wann | 2015-10-13 |
| 9153582 | Apparatus and method for FinFETs | Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Cheng-Hsien Wu | 2015-10-06 |
| 9147594 | Method for fabricating a strained structure | Tsung-Lin Lee, Chih-Hao Chang, Feng Yuan, Jeff J. Xu | 2015-09-29 |
| 9123633 | Methods for forming semiconductor regions in trenches | Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann | 2015-09-01 |
| 9123546 | Multi-layer semiconductor device structures with different channel materials | Yi-Tang Lin, Clement Hsingjen Wann | 2015-09-01 |
| 9105654 | Source/drain profile for FinFET | Ta-Chun Ma, Cheng-Hsien Wu, Clement Hsingjen Wann | 2015-08-11 |
| 9087902 | FinFETs with strained well regions | Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann | 2015-07-21 |
| 9076819 | Contact structure of semiconductor device | Cheng-Hsien Wu, Clement Hsingjen Wann | 2015-07-07 |
| 9006788 | Source/drain re-growth for manufacturing III-V based transistors | Clement Hsingjen Wann | 2015-04-14 |
| 8994002 | FinFET having superlattice stressor | Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Cheng-Hsien Wu | 2015-03-31 |
| 8969156 | Semiconductor structures and methods with high mobility and high energy bandgap materials | Cheng-Hsien Wu, Clement Hsingjen Wann | 2015-03-03 |
| 8962400 | In-situ doping of arsenic for source and drain epitaxy | Ji-Yin Tsai, Yao-Tsung Huang, Clement Hsingjen Wann | 2015-02-24 |