Issued Patents All Time
Showing 126–150 of 196 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8927371 | High-mobility multiple-gate transistor with improved on-to-off current ratio | Clement Hsingjen Wann | 2015-01-06 |
| 8927352 | Channel epitaxial regrowth flow (CRF) | Ching-Feng Fu, Shih-Ting Hung, Hsin-Chih Chen, Clement Hsingjen Wann | 2015-01-06 |
| 8878302 | Semiconductor device having SiGe substrate, interfacial layer and high K dielectric layer | Chao-Ching Cheng, Ji-Yin Tsai, Cheng-Hsien Wu, Clement Hsingjen Wann | 2014-11-04 |
| 8866188 | Semiconductor devices and methods of manufacture thereof | Ji-Yin Tsai, Yao-Tsung Huang, Clement Hsingjen Wann | 2014-10-21 |
| 8841701 | FinFET device having a channel defined in a diamond-like shape semiconductor structure | You-Ru Lin, Cheng-Hsien Wu, Clement Hsingjen Wann | 2014-09-23 |
| 8836016 | Semiconductor structures and methods with high mobility and high energy bandgap materials | Cheng-Hsien Wu, Clement Hsingjen Wann | 2014-09-16 |
| 8815712 | Method for epitaxial re-growth of semiconductor region | Cheng-Tien Wan, You-Ru Lin, Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann | 2014-08-26 |
| 8816391 | Source/drain engineering of devices with high-mobility channels | Clement Hsingjen Wann | 2014-08-26 |
| 8809202 | Methods of manufacturing semiconductor devices including use of a protective material | Chih-Hui Weng, Wei-Sheng Yun, Shao-Ming Yu, Hsin-Chih Chen, Clement Hsingjen Wann | 2014-08-19 |
| 8786019 | CMOS FinFET device | Cheng-Hsien Wu, Clement Hsingjen Wann | 2014-07-22 |
| 8785285 | Semiconductor devices and methods of manufacture thereof | Ji-Yin Tsai, Yao-Tsung Huang, Clement Hsingjen Wann | 2014-07-22 |
| 8759203 | Growing III-V compound semiconductors from trenches filled with intermediate layers | Clement Hsingjen Wann, Cheng-Hsien Wu | 2014-06-24 |
| 8759920 | Semiconductor device and method of forming the same | Clement Hsingjen Wann, Chih-Hao Chang, Shou-Zen Chang, Yasutoshi Okuno, Andrew Joseph Kelly | 2014-06-24 |
| 8742509 | Apparatus and method for FinFETs | Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Cheng-Hsien Wu | 2014-06-03 |
| 8728906 | Reverse tone STI formation | Kai-Tai Chang, Yi-Shan Chen, Hsin-Chih Chen, Clement Hsingjen Wann | 2014-05-20 |
| 8716765 | Contact structure of semiconductor device | Cheng-Hsien Wu, Clement Hsingjen Wann | 2014-05-06 |
| 8674408 | Reducing source/drain resistance of III-V based transistors | Clement Hsingjen Wann | 2014-03-18 |
| 8674341 | High-mobility multiple-gate transistor with improved on-to-off current ratio | Clement Hsingjen Wann | 2014-03-18 |
| 8629478 | Fin structure for high mobility multiple-gate transistor | Clement Hsingjen Wann | 2014-01-14 |
| 8629040 | Methods for epitaxially growing active regions between STI regions | Kai-Tai Chang, Yi-Shan Chen, Hsin-Chih Chen, Clement Hsingjen Wann | 2014-01-14 |
| 8629012 | Method for forming antimony-based FETs monolithically | Heng-Kuang Lin, Pei-Chin Chiu, Jen-Inn Chyi, Han-Chieh Ho, Clement Hsingjen Wann +1 more | 2014-01-14 |
| 8618556 | FinFET design and method of fabricating same | Cheng-Hsien Wu, Yao-Tsung Huang, Clement Hsingjen Wann | 2013-12-31 |
| 8617976 | Source/drain re-growth for manufacturing III-V based transistors | Clement Hsingjen Wann | 2013-12-31 |
| 8609517 | MOCVD for growing III-V compound semiconductors on silicon substrates | Clement Hsingjen Wann, Cheng-Hsien Wu | 2013-12-17 |
| 8609518 | Re-growing source/drain regions from un-relaxed silicon layer | Clement Hsingjen Wann, Yao-Tsung Huang, Cheng-Ying Huang | 2013-12-17 |