Issued Patents All Time
Showing 76–100 of 196 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9748388 | Method of forming strained structures of semiconductor devices | Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-08-29 |
| 9722051 | Apparatus and method for FinFETs | Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Cheng-Hsien Wu | 2017-08-01 |
| 9673105 | CMOS devices with Schottky source and drain regions | Hung-Wei Chen, Chung-Hu Ke, Wen-Chin Lee | 2017-06-06 |
| 9659780 | Multiple gate field-effect transistors having oxygen-scavenged gate stack | Yee-Chia Yeo, Chih Chieh Yeh, Cheng-Hsien Wu, Liang-Yin Chen, Xiong-Fei Yu +2 more | 2017-05-23 |
| 9601594 | Semiconductor device with enhanced strain | Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-03-21 |
| 9601342 | FinFETs with strained well regions | Yi-Jing Lee, Chi-Wen Liu, Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-03-21 |
| 9601328 | Growing a III-V layer on silicon using aligned nano-scale patterns | Clement Hsingjen Wann | 2017-03-21 |
| 9595614 | Semiconductor structures and methods with high mobility and high energy bandgap materials | Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-03-14 |
| 9590068 | High-mobility multiple-gate transistor with improved on-to-off current ratio | Clement Hsingjen Wann | 2017-03-07 |
| 9583379 | Inverted trapezoidal recess for epitaxial growth | Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-02-28 |
| 9564529 | Method for fabricating a strained structure and structure formed | Tsung-Lin Lee, Chih-Hao Chang, Feng Yuan, Jeff J. Xu | 2017-02-07 |
| 9564489 | Multiple gate field-effect transistors having oxygen-scavenged gate stack | Yee-Chia Yeo, Chih Chieh Yeh, Cheng-Hsien Wu, Liang-Yin Chen, Xiong-Fei Yu +2 more | 2017-02-07 |
| 9559099 | Apparatus and method for FinFETs | Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Cheng-Hsien Wu | 2017-01-31 |
| 9553149 | Semiconductor device with a strained region and method of making | Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-01-24 |
| 9553012 | Semiconductor structure and the manufacturing method thereof | Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-01-24 |
| 9548303 | FinFET devices with unique fin shape and the fabrication thereof | Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann | 2017-01-17 |
| 9530865 | Strained MOS device and methods for forming the same | Ta-Ming Kuan, Wen-Chin Lee | 2016-12-27 |
| 9530776 | FinFET semiconductor device with germanium diffusion over silicon fins | Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann | 2016-12-27 |
| 9508849 | Device having source/drain regions regrown from un-relaxed silicon layer | Clement Hsingjen Wann, Yao-Tsung Huang, Cheng-Ying Huang | 2016-11-29 |
| 9502539 | FINFET device having a channel defined in a diamond-like shape semiconductor structure | You-Ru Lin, Cheng-Hsien Wu, Clement Hsingjen Wann | 2016-11-22 |
| 9455320 | FinFETs with strained well regions | Yi-Jing Lee, Cheng-Hsien Wu, Clement Hsingjen Wann | 2016-09-27 |
| 9450098 | FinFET having superlattice stressor | Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Cheng-Hsien Wu | 2016-09-20 |
| 9443769 | Wrap-around contact | Sung-Li Wang, Neng-Kuo Chen, Ding-Kang Shih, Meng-Chun Chang, Yi-An Lin +5 more | 2016-09-13 |
| 9406518 | (110) surface orientation for reducing fermi-level-pinning between high-K dielectric and group III-V compound semiconductor substrate | Chao-Ching Cheng, Hsingjen Wann | 2016-08-02 |
| 9391203 | Channel epitaxial regrowth flow (CRF) | Ching-Feng Fu, Shih-Ting Hung, Hsin-Chih Chen, Clement Hsingjen Wann | 2016-07-12 |