Issued Patents All Time
Showing 51–75 of 167 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10991691 | Semiconductor device having fins and an isolation region | Chia-Sheng Fan, Tung-Heng Hsieh | 2021-04-27 |
| 10971588 | Semiconductor device including FinFET with self-align contact | Yi-Jyun Huang, Tung-Heng Hsieh | 2021-04-06 |
| 10957604 | Semiconductor device and method | Shih-Chieh Wu, Pang-Chi Wu, Kuo-Yi Chao, Mei-Yun Wang, Hsien-Huang Liao +1 more | 2021-03-23 |
| 10943054 | Integrated circuit layouts with line-end extensions | Hsien-Huang Liao, Tung-Heng Hsieh, Yung Feng Chang | 2021-03-09 |
| 10867101 | Leakage reduction between two transistor devices on a same continuous fin | Chun-Yen Lin, Tung-Heng Hsieh | 2020-12-15 |
| 10854512 | Method and IC design with non-linear power rails | Sheng-Hsiung Wang, Tung-Heng Hsieh | 2020-12-01 |
| 10840149 | Fabrication method of a metal gate structure | Ming Zhu, Harry-Hak-Lay Chuang | 2020-11-17 |
| 10832958 | Leakage reduction methods and structures thereof | Chia-Sheng Fan, Chun-Yen Lin, Tung-Heng Hsieh | 2020-11-10 |
| 10803227 | Integrated circuit layouts with line-end extensions | Hsien-Huang Liao, Tung-Heng Hsieh, Yung Feng Chang | 2020-10-13 |
| 10692750 | Method for fabricating a semiconductor device | Harry-Hak-Lay Chuang, Wei-Cheng Wu, Meng-Fang Hsu, Kong-Pin Chang, Chia Ming Liang | 2020-06-23 |
| 10665513 | Fin field-effect transistor device and method | Ming-Ching Chang, Yu-Chao Lin | 2020-05-26 |
| 10658492 | Polysilicon design for replacement gate technology | Harry-Hak-Lay Chuang, Kong-Beng Thei, Sheng-Chen Chung, Chiung-Han Yeh, Lee-Wee Teo +1 more | 2020-05-19 |
| 10658486 | Mitigation of time dependent dielectric breakdown | Yi-Jyun Huang, Tung-Heng Hsieh | 2020-05-19 |
| 10553699 | Gate structure of a semiconductor device | Ming Zhu, Hui-Wen Lin, Harry-Hak-Lay Chuang, Yuan-Sheng Huang, Ryan Chia-Jen Chen +4 more | 2020-02-04 |
| 10535746 | Metal gate structure and methods thereof | Tzung-Chi Lee, Tung-Heng Hsieh, Chia-Sheng Fan | 2020-01-14 |
| 10522634 | Finfet with self-aligned source/drain | Yi-Jyun Huang, Tung-Heng Hsieh | 2019-12-31 |
| 10515957 | Semiconductor device having fins | Chia-Sheng Fan, Tung-Heng Hsieh | 2019-12-24 |
| 10515850 | Method and IC design with non-linear power rails | Sheng-Hsiung Wang, Tung-Heng Hsieh | 2019-12-24 |
| 10453837 | System and method of fabricating ESD finFET with improved metal landing in the drain | Tzung-Chi Lee, Tung-Heng Hsieh, Yung Feng Chang | 2019-10-22 |
| 10418361 | Circuit incorporating multiple gate stack compositions | Po-Nien Chen, Chi-Hsun Hsieh, Harry-Hak-Lay Chuang, Wei-Cheng Wu, Eric Huang | 2019-09-17 |
| 10403736 | Polysilicon design for replacement gate technology | Harry-Hak-Lay Chuang, Kong-Beng Thei, Sheng-Chen Chung, Chiung-Han Yeh, Lee-Wee Teo +1 more | 2019-09-03 |
| 10388531 | Self-aligned insulated film for high-k metal gate device | Jin-Aun Ng, Harry-Hak-Lay Chuang, Maxi Chang, Chih-Tang Peng, Chih-Yang Yeh +8 more | 2019-08-20 |
| 10354997 | Method for manufacturing semiconductor device with replacement gates | Chia-Sheng Fan, Tung-Heng Hsieh | 2019-07-16 |
| 10340348 | Method of manufacturing finFETs with self-align contacts | Yi-Jyun Huang, Tung-Heng Hsieh | 2019-07-02 |
| 10276447 | Semiconductor structures and methods of forming the same | Harry-Hak-Lay Chuang, Po-Nien Chen | 2019-04-30 |