Issued Patents All Time
Showing 26–50 of 53 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8148272 | Application of millisecond heating source for surface treatment | David Gao | 2012-04-03 |
| 8105920 | Semiconductor device with amorphous silicon mas memory cell structure and manufacturing method thereof | — | 2012-01-31 |
| 8101478 | TFT MONOS or SONOS memory cell structures | — | 2012-01-24 |
| 7887884 | Method for atomic layer deposition of materials using an atmospheric pressure for semiconductor devices | — | 2011-02-15 |
| 7709386 | Atomic layer deposition method and semiconductor device formed by the same | Hua Ji, Min-hwa Chi | 2010-05-04 |
| 7670900 | Method and structure for fabricating capacitor devices for integrated circuits | Roger Lee, Guoqing Chen | 2010-03-02 |
| 7615475 | Method for fabricating landing polysilicon contact structures for semiconductor devices | — | 2009-11-10 |
| 7569487 | Method for atomic layer deposition of materials using a pre-treatment for semiconductor devices | — | 2009-08-04 |
| 6300217 | Method for fabricating a semiconductor device including a step for forming an amorphous silicon layer followed by a crystallization thereof | Masaki Kuramae | 2001-10-09 |
| 5881876 | Method and vessel for storing a substrate cleaning brush | Masahiro Nonomura, Akihiko Morita, Naoko Onodera | 1999-03-16 |
| 5843829 | Method for fabricating a semiconductor device including a step for forming an amorphous silicon layer followed by a crystallization thereof | Masaki Kuramae | 1998-12-01 |
| 5609721 | Semiconductor device manufacturing apparatus and its cleaning method | Atsuhiro Tsukune, Kiyokatsu Suzuki, Katsuyoshi Matsuura, Hirokazu Yamanishi | 1997-03-11 |
| 5589410 | An integrated semiconductor device having a buried semiconductor layer and fabrication method thereof | Noriaki Sato | 1996-12-31 |
| 5518937 | Semiconductor device having a region doped to a level exceeding the solubility limit | Yuji Furumura, Tsutomu Nakazawa, Takashi Eshita, Mamoru Maeda, Tsunenori Yamauchi | 1996-05-21 |
| 5362981 | Integrated semiconductor device having a buried semiconductor layer and fabrication method thereof | Noriaki Sato | 1994-11-08 |
| 5298458 | Method of forming tungsten film | Yuji Furumura, Toshihiko Ono | 1994-03-29 |
| 5270224 | Method of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limit | Yuji Furumura, Tsutomu Nakazawa, Takashi Eshita, Mamoru Maeda, Tsunenori Yamauchi | 1993-12-14 |
| 5264038 | Chemical vapor deposition system | Tatsushi Hara, Nobuhiro Misawa, Toshiya Suzuki, Takayuki Ohba, Akio Yamaguchi | 1993-11-23 |
| 5233163 | Graphite columnar heating body for semiconductor wafer heating | Yuji Furumura, Atsuhiro Tsukune, Hiroshi Miyata | 1993-08-03 |
| 5111266 | Semiconductor device having a region doped to a level exceeding the solubility limit | Yuji Furumura, Tsutomu Nakazawa, Takashi Eshita, Mamoru Maeda, Tsunenori Yamauchi | 1992-05-05 |
| 5103285 | Silicon carbide barrier between silicon substrate and metal layer | Yuji Furumura, Takashi Eshita, Kikuo Itoh, Masahiko Doki | 1992-04-07 |
| 5082695 | Method of fabricating an X-ray exposure mask | Masao Yamada, Masafumi Nakaishi, Kenji Nakagawa, Yuji Furumura, Takashi Eshita | 1992-01-21 |
| 4966861 | Vapor deposition method for simultaneously growing an epitaxial silicon layer and a polycrystalline silicone layer over a selectively oxidized silicon substrate | Kazuyuki Kurita, Shinji Nakamura, Atuo Shimizu | 1990-10-30 |
| 4879255 | Method for fabricating bipolar-MOS devices | Tatsuya Deguchi | 1989-11-07 |
| 4876219 | Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers | Takashi Eshita, Yuji Furumura, Takuya Watanabe | 1989-10-24 |