Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6191441 | Ferroelectric memory device and its drive method | Masaki Aoki, Hirotaka Tamura, Hideki Takauchi | 2001-02-20 |
| 6188090 | Semiconductor device having a heteroepitaxial substrate | Shinji Miyagaki, Satoshi Ohkubo, Kazuaki Takai | 2001-02-13 |
| 6046929 | Memory device with two ferroelectric capacitors per one cell | Masaki Aoki, Akio Itoh, Mitsuteru Mushiga, Ko Nakamura | 2000-04-04 |
| 5834362 | Method of making a device having a heteroepitaxial substrate | Shinji Miyagaki, Satoshi Ohkubo, Kazuaki Takai | 1998-11-10 |
| 5518937 | Semiconductor device having a region doped to a level exceeding the solubility limit | Yuji Furumura, Fumitake Mieno, Tsutomu Nakazawa, Mamoru Maeda, Tsunenori Yamauchi | 1996-05-21 |
| 5402748 | Method of growing a compound semiconductor film | Kazuaki Takai | 1995-04-04 |
| 5270224 | Method of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limit | Yuji Furumura, Fumitake Mieno, Tsutomu Nakazawa, Mamoru Maeda, Tsunenori Yamauchi | 1993-12-14 |
| 5144379 | Semiconductor device having a group III-V epitaxial semiconductor layer on a substrate | Toshikazu Inoue | 1992-09-01 |
| 5111266 | Semiconductor device having a region doped to a level exceeding the solubility limit | Yuji Furumura, Fumitake Mieno, Tsutomu Nakazawa, Mamoru Maeda, Tsunenori Yamauchi | 1992-05-05 |
| 5103285 | Silicon carbide barrier between silicon substrate and metal layer | Yuji Furumura, Fumitake Mieno, Kikuo Itoh, Masahiko Doki | 1992-04-07 |
| 5082695 | Method of fabricating an X-ray exposure mask | Masao Yamada, Masafumi Nakaishi, Kenji Nakagawa, Yuji Furumura, Fumitake Mieno | 1992-01-21 |
| 5057880 | Semiconductor device having a heteroepitaxial substrate | Toshikazu Inoue, Kanetake Takasaki | 1991-10-15 |
| 5019874 | Semiconductor device having an epitaxial layer grown heteroepitaxially on an underlying substrate | Toshikazu Inoue | 1991-05-28 |
| 4997787 | Method for fabricating a semiconductor film which is electrically isolated from a substrate | — | 1991-03-05 |
| 4994413 | Method of manufacturing a semiconductor device having a silicon carbide layer | — | 1991-02-19 |
| 4876219 | Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers | Fumitake Mieno, Yuji Furumura, Takuya Watanabe | 1989-10-24 |
| 4855254 | Method of growing a single crystalline .beta.-SiC layer on a silicon substrate | Fumitake Mieno, Yuji Furumura, Kikuo Itoh | 1989-08-08 |