Issued Patents All Time
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6984267 | Manufacture system for semiconductor device with thin gate insulating film | Kiyoshi Irino, Ken-ichi Hikazutani, Tatsuya Kawamura, Taro Sugizaki, Satoshi Ohkubo +1 more | 2006-01-10 |
| 6780699 | Semiconductor device and method for fabricating the same | Yasuyuki Tamura, Yusuke Morisaki, Yoshihiro Sugita, Kiyoshi Irino, Takayuki Aoyama +3 more | 2004-08-24 |
| 6468926 | Manufacture method and system for semiconductor device with thin gate insulating film of oxynitride | Kiyoshi Irino, Ken-ichi Hikazutani, Tatsuya Kawamura, Taro Sugizaki, Satoshi Ohkubo +1 more | 2002-10-22 |
| 5424243 | Method of making a compound semiconductor crystal-on-substrate structure | — | 1995-06-13 |
| 5312783 | Process for the preparation of a high dielectric thin film using ECR plasma CVD | Satoshi Nakai | 1994-05-17 |
| 5210052 | Method for fabricating a semiconductor substrate | — | 1993-05-11 |
| 5183778 | Method of producing a semiconductor device | — | 1993-02-02 |
| 5107317 | Semiconductor device with first and second buffer layers | — | 1992-04-21 |
| 5057880 | Semiconductor device having a heteroepitaxial substrate | Takashi Eshita, Toshikazu Inoue | 1991-10-15 |
| 5019529 | Heteroepitaxial growth method | — | 1991-05-28 |
| 4929985 | Compound semiconductor device | — | 1990-05-29 |
| 4781945 | Process for the formation of phosphosilicate glass coating | Masahide Nishimura, Kenji Koyama, Atsuhiro Tsukune | 1988-11-01 |
| 4741919 | Process for preparation of semiconductor device | — | 1988-05-03 |
| 4581622 | UV erasable EPROM with UV transparent silicon oxynitride coating | Mikio Takagi, Kenji Koyama | 1986-04-08 |
| 4539068 | Vapor phase growth method | Mikio Takagi, Kenji Koyama | 1985-09-03 |
| 4532022 | Process of producing a semiconductor device | Mikio Takagi, Kenji Koyama | 1985-07-30 |
| 4406053 | Process for manufacturing a semiconductor device having a non-porous passivation layer | Yoshimi Shioya | 1983-09-27 |
| 4394401 | Method of plasma enhanced chemical vapor deposition of phosphosilicate glass film | Yoshimi Shioya, Mamoru Maeda, Mikio Takagi | 1983-07-19 |
| 4384933 | Method of reactive sputtering | — | 1983-05-24 |
| 4363868 | Process of producing semiconductor devices by forming a silicon oxynitride layer by a plasma CVD technique which is employed in a selective oxidation process | Mamoru Maeda | 1982-12-14 |