XL

Xia Li

QU Qualcomm: 220 patents #101 of 12,104Top 1%
AM AMD: 12 patents #986 of 9,279Top 15%
Apple: 8 patents #3,815 of 18,612Top 25%
MC Monell Chemical Senses Center: 6 patents #3 of 82Top 4%
GZ Gree Electric Appliances, Inc. Of Zhuhai: 5 patents #87 of 1,089Top 8%
IBM: 5 patents #18,733 of 70,183Top 30%
Honda Motor Co.: 5 patents #4,418 of 21,052Top 25%
VE Verizon: 4 patents #1,190 of 6,226Top 20%
CM Chartered Semiconductor Manufacturing: 4 patents #148 of 840Top 20%
MC Mc10: 4 patents #20 of 65Top 35%
UN Unknown: 4 patents #4,220 of 83,584Top 6%
WC Wuhan Tianma Microelectronics Co.: 4 patents #86 of 395Top 25%
SI Sionyx: 3 patents #13 of 20Top 65%
UU Utah State University: 3 patents #42 of 289Top 15%
Huawei: 3 patents #4,041 of 15,535Top 30%
SU Shanghai University: 3 patents #20 of 195Top 15%
YC Yanfeng Adent Seating Co.: 2 patents #2 of 21Top 10%
GE: 2 patents #13,562 of 36,430Top 40%
PL Petrochina Company Limited: 2 patents #138 of 890Top 20%
ZT Zte: 1 patents #1,433 of 3,593Top 40%
Google: 1 patents #14,769 of 22,993Top 65%
MT Macau University Of Science And Technology: 1 patents #70 of 165Top 45%
PA Panasonic: 1 patents #13,264 of 21,108Top 65%
NU Northeast Electric Power University: 1 patents #15 of 68Top 25%
JT Jiangsu University Of Science And Technology: 1 patents #53 of 215Top 25%
QU Qorvo Us: 1 patents #255 of 457Top 60%
SC Shanghai Tianma Am-Oled Co.: 1 patents #137 of 214Top 65%
ST South China University Of Technology: 1 patents #245 of 947Top 30%
GT Guangdong University Of Petrochemical Technology: 1 patents #13 of 61Top 25%
XC Xiamen Tianma Micro-Electronics Co.: 1 patents #179 of 360Top 50%
YC Yanfeng International Seating Systems Co.: 1 patents #2 of 8Top 25%
📍 San Jose, CA: #22 of 32,062 inventorsTop 1%
🗺 California: #194 of 386,348 inventorsTop 1%
Overall (All Time): #1,079 of 4,157,543Top 1%
322
Patents All Time

Issued Patents All Time

Showing 126–150 of 322 patents

Patent #TitleCo-InventorsDate
10424380 Physically unclonable function (PUF) memory employing static random access memory (SRAM) bit cells with added passive resistance to enhance transistor imbalance for improved PUF output reproducibility Jianguo Yao, Seung H. Kang 2019-09-24
10410714 Multi-level cell (MLC) static random access memory (SRAM) (MLC SRAM) cells configured to perform multiplication operations Seung H. Kang, Venkat Rangan, Rashid Ahmed Akbar Attar, Nicholas Ka Ming Stevens-Yu 2019-09-10
10396188 Heterojunction bipolar transistors and method of fabricating the same Bin Yang, Gengming Tao 2019-08-27
10347821 Electrode structure for resistive memory device Yu Lu, Junjing Bao, Seung H. Kang 2019-07-09
10340395 Semiconductor variable capacitor using threshold implant region Fabio Alessio Marino, Qingqing Liang, Francesco Carobolante, Seung H. Kang 2019-07-02
10332590 Static random access memory (SRAM) bit cells employing current mirror-gated read ports for reduced power consumption Jianguo Yao 2019-06-25
10319830 Heterojunction bipolar transistor power amplifier with backside thermal heatsink Bin Yang, Gengming Tao 2019-06-11
10312244 Bi-stable static random access memory (SRAM) bit cells that facilitate direct writing for storage Seung H. Kang, Bin Yang, Gengming Tao 2019-06-04
10290352 System, apparatus, and method of programming a one-time programmable memory circuit having dual programming regions Xiao Lu, Xiaonan Chen, Zhongze Wang 2019-05-14
10283190 Transpose non-volatile (NV) memory (NVM) bit cells and related data arrays configured for row and column, transpose access operations 2019-05-07
10283650 Silicon on insulator (SOI) transcap integration providing front and back gate capacitance tuning Bin Yang, Gengming Tao 2019-05-07
10242149 Enhancing integrated circuit noise performance Suo Ming Pu, Xiao Feng Tang, Bo Yu 2019-03-26
10224368 Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit path Jimmy Jianan Kan, Seung H. Kang, Bin Yang, Gengming Tao 2019-03-05
10210920 Magnetic tunnel junction (MTJ) devices with varied breakdown voltages in different memory arrays fabricated in a same semiconductor die to facilitate different memory applications Wei-Chuan Chen, Wah Nam Hsu, Seung H. Kang 2019-02-19
10205018 Planar double gate semiconductor device Bin Yang, Gengming Tao 2019-02-12
10186514 Bi-stable static random access memory (SRAM) bit cells formed from III-V compounds and configured to achieve higher operating speeds Gengming Tao, Bin Yang 2019-01-22
10172142 Interference coordinator method and device Rui Liu, Fazhong Si, Liping Yang 2019-01-01
10170610 Pseudomorphic high electron mobility transistor with low contact resistance Gengming Tao, Bin Yang 2019-01-01
10164054 Compound semiconductor field effect transistor with self-aligned gate Bin Yang, Gengming Tao, Periannan Chidambaram 2018-12-25
10134881 Quantum well thermal sensing for power amplifier Gengming Tao, Bin Yang 2018-11-20
10109724 Heterojunction bipolar transistor unit cell and power stage for a power amplifier Gengming Tao, Bin Yang, Miguel MIRANDA CORBALAN 2018-10-23
10102895 Back gate biasing magneto-resistive random access memory (MRAM) bit cells to reduce or avoid write operation failures caused by source degeneration Seung H. Kang 2018-10-16
10102898 Ferroelectric-modulated Schottky non-volatile memory Jeffrey Junhao Xu, Seung H. Kang 2018-10-16
10084074 Compound semiconductor field effect transistor gate length scaling Bin Yang, Gengming Tao, Periannan Chidambaram 2018-09-25
10062683 Compound semiconductor transistor and high-Q passive device single chip integration Bin Yang, Gengming Tao 2018-08-28