Issued Patents All Time
Showing 176–200 of 322 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9576801 | High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory | Jeffrey Junhao Xu, Zhongze Wang, Bin Yang, Xiaonan Chen, Yu Lu | 2017-02-21 |
| 9548096 | Reverse complement magnetic tunnel junction (MTJ) bit cells employing shared source lines, and related methods | Yu Lu, Xiaochun Zhu | 2017-01-17 |
| 9548333 | MRAM integration with low-K inter-metal dielectric for reduced parasitic capacitance | Yu Lu, Seung H. Kang | 2017-01-17 |
| 9543036 | System and method of programming a memory cell | Seung H. Kang, Xiaochun Zhu | 2017-01-10 |
| 9508439 | Non-volatile multiple time programmable memory device | Jeffrey Junhao Xu, Xiao Lu, Matthew Michael Nowak, Seung H. Kang, Xiaonan Chen +2 more | 2016-11-29 |
| 9502424 | Integrated circuit device featuring an antifuse and method of making same | Zhongze Wang, John Jianhong Zhu | 2016-11-22 |
| 9496048 | Differential one-time-programmable (OTP) memory array | Xiaonan Chen, Zhongze Wang | 2016-11-15 |
| 9496314 | Shared source line magnetic tunnel junction (MTJ) bit cells employing uniform MTJ connection patterns for reduced area | Yu Lu, Xiaochun Zhu, Seung H. Kang | 2016-11-15 |
| 9461094 | Switching film structure for magnetic random access memory (MRAM) cell | Wei-Chuan Chen, Yu Lu, Kangho Lee, Seung H. Kang | 2016-10-04 |
| 9461055 | Advanced metal-nitride-oxide-silicon multiple-time programmable memory | Zhongze Wang, Daniel Wayne Perry | 2016-10-04 |
| 9449709 | Volatile memory and one-time program (OTP) compatible memory cell and programming method | Xiaonan Chen, Niladri Narayan Mojumder, Zhongze Wang, Weidan Li | 2016-09-20 |
| 9437272 | Multi-bit spin torque transfer magnetoresistive random access memory with sub-arrays | Yu Lu | 2016-09-06 |
| 9431097 | Volatile/non-volatile SRAM device | Xiaonan Chen, Zhongze Wang | 2016-08-30 |
| 9425296 | Vertical tunnel field effect transistor | Ming Cai, Bin Yang | 2016-08-23 |
| 9412818 | System and method of manufacturing a fin field-effect transistor having multiple fin heights | Bin Yang, PR Chidambaram, Choh Fei Yeap | 2016-08-09 |
| 9413349 | High-K (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) switching devices, and related systems and methods | Xiao Lu, Xiaonan Chen, Zhongze Wang, Choh Fei Yeap | 2016-08-09 |
| 9406689 | Logic finFET high-K/conductive gate embedded multiple time programmable flash memory | Bin Yang, Seung H. Kang | 2016-08-02 |
| 9406875 | MRAM integration techniques for technology scaling | Yu Lu, Seung H. Kang | 2016-08-02 |
| 9385305 | STT-MRAM design enhanced by switching current induced magnetic field | William Xia, Wenqing Wu, Kendrick Hoy Leong Yuen, Abhishek Banerjee, Seung H. Kang +1 more | 2016-07-05 |
| 9385308 | Perpendicular magnetic tunnel junction structure | — | 2016-07-05 |
| 9373412 | System and method of programming a memory cell | Bin Yang | 2016-06-21 |
| 9372123 | Flexible temperature sensor including conformable electronics | Sanjay Gupta, Kevin Dowling, Isaiah Kacyvenski, Melissa Ceruolo, Barry G. Ives | 2016-06-21 |
| 9373782 | MTJ structure and integration scheme | Seung H. Kang, Matthew Michael Nowak | 2016-06-21 |
| 9368718 | Method of forming a magnetic tunnel junction device | — | 2016-06-14 |
| 9349656 | Method of forming a complementary metal-oxide-semiconductor (CMOS) device | Bin Yang, Jun Yuan | 2016-05-24 |