Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Modified film stack and patterning strategy for stress compensation and prevention of pattern distortion in amorphous carbon gate patterning

Modified film stack and patterning strategy for stress compensation and prevention of pattern distortion in amorphous carbon gate patterning

US Patent 6773998 · Granted Aug 10, 2004

Estimated economic value: $1,968,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of spacer formation with straight sidewall of memory cells2025
System and method for manufacturing self-aligned STI with single poly2020
Split-gate semiconductor device with L-shaped gate2020
Split-gate semiconductor device with L-shaped gate2018
Ion implantation-assisted etch-back process for improving spacer shape and space2017
Buried hard mask for embedded semiconductor device patterning2017
Split-gate semiconductor device with L-shaped gate2017
Spacer formation with straight sidewall2016
Integrating transistors with different poly-silicon heights on the same die2016
Buried hard mask for embedded semiconductor device patterning2016
System and method for manufacturing self-aligned STI with single poly2016
Formation of gate sidewall structure2016