Issued Patents All Time
Showing 51–75 of 100 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7087182 | Process of forming an electrically erasable programmable read only memory with an oxide layer exposed to hydrogen and nitrogen | — | 2006-08-08 |
| 7084448 | Double sided container process used during the manufacture of a semiconductor device | Scott DeBoer, John T. Moore | 2006-08-01 |
| 7081656 | CMOS constructions | Denise M. Eppich | 2006-07-25 |
| 7064052 | Method of processing a transistor gate dielectric film with stem | Scott DeBoer, Dan Gealy, Husam N. Al-Shareef | 2006-06-20 |
| 7056806 | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces | Cem Basceri, Trung T. Doan, Kevin L. Beaman, Lyle Breiner, Lingyi A. Zheng +3 more | 2006-06-06 |
| 7022623 | Method of fabricating a semiconductor device with a dielectric film using a wet oxidation with steam process | Scott DeBoer, Dan Gealy, Husam N. Al-Shareef | 2006-04-04 |
| 7019351 | Transistor devices, and methods of forming transistor devices and circuit devices | Denise M. Eppich | 2006-03-28 |
| 6998675 | Nucleation for improved flash erase characteristics | — | 2006-02-14 |
| 6972223 | Use of atomic oxygen process for improved barrier layer | Er-Xuan Ping | 2005-12-06 |
| 6963101 | Films doped with carbon for use in integrated circuit technology | John T. Moore | 2005-11-08 |
| 6949789 | Use of dilute steam ambient for improvement of flash devices | Don Powell, John T. Moore, Jeff McKee | 2005-09-27 |
| 6949477 | Method of fabricating a capacitive element for a semiconductor device | Scott DeBoer, Dan Gealy, Husam N. Al-Shareef | 2005-09-27 |
| 6924197 | Method of fabricating an integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source | — | 2005-08-02 |
| 6921937 | Integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source | — | 2005-07-26 |
| 6918965 | Single substrate annealing of magnetoresistive structure | Mark E. Tuttle | 2005-07-19 |
| 6908868 | Gas passivation on nitride encapsulated devices | Fernando Gonzalez | 2005-06-21 |
| 6882031 | Ammonia gas passivation on nitride encapsulated devices | Fernando Gonzalez | 2005-04-19 |
| 6881636 | Methods of forming deuterated silicon nitride-containing materials | Lyle Breiner | 2005-04-19 |
| 6849544 | Forming a conductive structure in a semiconductor device | Yongjun Jeff Hu, Pai-Hung Pan, Deepa Ratakonda, James A. Beck, Randhir P. S. Thakur | 2005-02-01 |
| 6815805 | Method of fabricating an integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source | — | 2004-11-09 |
| 6791138 | Use of atomic oxygen process for improved barrier layer | Er-Xuan Ping | 2004-09-14 |
| 6784124 | Methods of selective oxidation conditions for dielectric conditioning | Don Powell | 2004-08-31 |
| 6774443 | System and device including a barrier layer | Don Powell, Garry Mercaldi | 2004-08-10 |
| 6762451 | Nucleation for improved flash erase characteristics | — | 2004-07-13 |
| 6734531 | Use of selective oxidation conditions for dielectric conditioning | Don Powell | 2004-05-11 |