Issued Patents All Time
Showing 76–100 of 100 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6713807 | Films doped with carbon for use in integrated circuit technology | John T. Moore | 2004-03-30 |
| 6696336 | Double sided container process used during the manufacture of a semiconductor device | Scott DeBoer, John T. Moore | 2004-02-24 |
| 6596595 | Forming a conductive structure in a semiconductor device | Yongjun Jeff Hu, Pai-Hung Pan, Deepa Ratakonda, James A. Beck, Randhir P. S. Thakur | 2003-07-22 |
| 6592661 | Method for processing wafers in a semiconductor fabrication system | Randhir P. S. Thakur | 2003-07-15 |
| 6576979 | Use of selective oxidation conditions for dielectric conditioning | Don Powell | 2003-06-10 |
| 6559007 | Method for forming flash memory device having a tunnel dielectric comprising nitrided oxide | — | 2003-05-06 |
| 6555487 | Method of selective oxidation conditions for dielectric conditioning | Don Powell | 2003-04-29 |
| 6544908 | Ammonia gas passivation on nitride encapsulated devices | Fernando Gonzalez | 2003-04-08 |
| 6475883 | Method for forming a barrier layer | Don Powell, Garry Mercaldi | 2002-11-05 |
| 6462371 | Films doped with carbon for use in integrated circuit technology | John T. Moore | 2002-10-08 |
| 6455372 | Nucleation for improved flash erase characteristics | — | 2002-09-24 |
| 6444482 | Method of monitoring power supplied to heat a substrate | Avishai Kepten, Michael Sendler | 2002-09-03 |
| 6410968 | Semiconductor device with barrier layer | Don Powell, Garry Mercaldi | 2002-06-25 |
| 6362086 | Forming a conductive structure in a semiconductor device | Yongjun Jeff Hu, Pai-Hung Pan, Deepa Ratakonda, James A. Beck, Randhir P. S. Thakur | 2002-03-26 |
| 6348380 | Use of dilute steam ambient for improvement of flash devices | Don Powell, John T. Moore, Jeff McKee | 2002-02-19 |
| 6291868 | Forming a conductive structure in a semiconductor device | Yongjun Jeff Hu, Pai-Hung Pan, Deepa Ratakonda, James A. Beck, Randhir P. S. Thakur | 2001-09-18 |
| 6177127 | Method of monitoring emissivity | Avishai Kepten, Michael Sendler | 2001-01-23 |
| 6162737 | Films doped with carbon for use in integrated circuit technology | John T. Moore | 2000-12-19 |
| 6150208 | DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films | Scott DeBoer, Klaus Schuegraf, Randhir P. S. Thakur | 2000-11-21 |
| 5962065 | Method of forming polysilicon having a desired surface roughness | Avishai Kepten, Michael Sendler | 1999-10-05 |
| 5930106 | DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films | Scott DeBoer, Klaus Schuegraf, Randhir P. S. Thakur | 1999-07-27 |
| 5759262 | Method of forming hemispherical grained silicon | Randhir P. S. Thakur, Avishai Kepten, Michael Sendler | 1998-06-02 |
| 5688550 | Method of forming polysilicon having a desired surface roughness | Avishai Kepten, Michael Sendler | 1997-11-18 |
| 5634974 | Method for forming hemispherical grained silicon | Randhir P. S. Thakur, Avishai Kepten, Michael Sendler | 1997-06-03 |
| 5505158 | Apparatus and method for achieving growth-etch deposition of diamond using a chopped oxygen-acetylene flame | Thomas P. Thorpe | 1996-04-09 |