Issued Patents All Time
Showing 51–75 of 78 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11508437 | Restoring memory cell threshold voltages | Lingming Yang, Nevil N. Gajera | 2022-11-22 |
| 11476252 | Memory device having 2-transistor vertical memory cell and shared channel region | Kamal M. Karda, Durai Vishak Nirmal Ramaswamy, Haitao Liu | 2022-10-18 |
| 11475970 | Bipolar read retry | Yen-Chun Lee, Nevil N. Gajera | 2022-10-18 |
| 11417381 | Memory device having shared read/write access line for 2-transistor vertical memory cell | Kamal M. Karda, Durai Vishak Nirmal Ramaswamy | 2022-08-16 |
| 11404130 | Evaluation of background leakage to select write voltage in memory devices | Nevil N. Gajera, Zhongyuan Lu | 2022-08-02 |
| 11367483 | Techniques for applying multiple voltage pulses to select a memory cell | Josephine T. Hamada, Mingdong Cui, Joseph M. McCrate, Jessica Chen | 2022-06-21 |
| 11367484 | Multi-step pre-read for write operations in memory devices | Yen-Chun Lee, Nevil N. Gajera | 2022-06-21 |
| 11355209 | Accessing a multi-level memory cell | Xuan Anh Tran, Jessica Chen, Jason A. Durand, Nevil N. Gajera, Yen-Chun Lee | 2022-06-07 |
| 11355554 | Sense lines in three-dimensional memory arrays, and methods of forming the same | Lingming Yang, Fabio Pellizzer, Nevil N. Gajera, Lei Wei | 2022-06-07 |
| 11335684 | Memory device having 2-transistor memory cell and access line plate | Kamal M. Karda, Haitao Liu, Durai Vishak Nirmal Ramaswamy | 2022-05-17 |
| 11295822 | Multi-state programming of memory cells | Nevil N. Gajera | 2022-04-05 |
| 11296094 | Memory device having shared access line for 2-transistor vertical memory cell | Kamal M. Karda, Durai Vishak Nirmal Ramaswamy, Haitao Liu | 2022-04-05 |
| 11295811 | Increase of a sense current in memory | Zhongyuan Lu, Robert J. Gleixner | 2022-04-05 |
| 11222690 | Vertical 3D single word line gain cell with shared read/write bit line | Kamal M. Karda, Haitao Liu, Durai Vishak Nirmal Ramaswamy | 2022-01-11 |
| 11195998 | Memory structures having improved write endurance | Dale W. Collins, Anna Maria Conti, Fred Daniel Gealy, III, Andrea Gotti, Swapnil Lengade +1 more | 2021-12-07 |
| 11139016 | Read refresh operation | Fabio Pellizzer, Innocenzo Tortorelli, Nevil N. Gajera | 2021-10-05 |
| 11139034 | Data-based polarity write operations | Nevil N. Gajera, Hongmei Wang, Mingdong Cui | 2021-10-05 |
| 11107817 | Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies | Kamal M. Karda, Yi Fang Lee, Haitao Liu, Durai Vishak Nirmal Ramaswamy, Ramanathan Gandhi +2 more | 2021-08-31 |
| 11043260 | Single word line gain cell with complementary read write channel | Kamal M. Karda, Haitao Liu, Durai Vishak Nirmal Ramaswamy | 2021-06-22 |
| 10964385 | Restoring memory cell threshold voltages | Lingming Yang, Nevil N. Gajera | 2021-03-30 |
| 10943657 | Mitigation of voltage threshold drift associated with power down condition of non-volatile memory device | Fabio Pellizzer, Jessica Chen, Nevil N. Gajera | 2021-03-09 |
| 10867671 | Techniques for applying multiple voltage pulses to select a memory cell | Josephine T. Hamada, Mingdong Cui, Joseph M. McCrate, Jessica Chen | 2020-12-15 |
| 10680175 | Memory structures having improved write endurance | Dale W. Collins, Anna Maria Conti, Fred Daniel Gealy, III, Andrea Gotti, Swapnil Lengade +1 more | 2020-06-09 |
| 10185818 | Methods for generating random data using phase change materials and related devices and systems | Hongmei Wang, Sanjay Rangan | 2019-01-22 |
| 9575727 | Methods for generating random data using phase change materials and related devices and systems | Hongmei Wang, Sanjay Rangan | 2017-02-21 |