| 12213325 |
Techniques for manufacturing a double electrode memory array |
Anna Maria Conti, Pavan Reddy K. Aella |
2025-01-28 |
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| 12205641 |
Dynamically boosting read voltage for a memory device |
Nicola Ciocchini |
2025-01-21 |
|
| 11641788 |
Resistive interface material |
Dale W. Collins, Fabio Pellizzer |
2023-05-02 |
$32,757,000 |
| 11575085 |
Techniques for forming memory structures |
Pavan Reddy K. Aella, Dale W. Collins |
2023-02-07 |
$15,619,000 |
| 11545623 |
Fabrication of electrodes for memory cells |
Pengyuan Zheng, Yongjun Jeff Hu, Yao Jin, Hongqi Li |
2023-01-03 |
$12,293,000 |
| 11538988 |
Memory device with multi-layer liner structure |
Santanu Sarkar, Adam William Saxler |
2022-12-27 |
$12,365,000 |
| 11444243 |
Electronic devices comprising metal oxide materials and related methods and systems |
Santanu Sarkar, Robert K. Grubbs, Farrell M. Good, Adam William Saxler |
2022-09-13 |
$11,426,000 |
| 11373705 |
Dynamically boosting read voltage for a memory device |
Nicola Ciocchini |
2022-06-28 |
$17,627,000 |
| 11195998 |
Memory structures having improved write endurance |
Karthik Sarpatwari, Dale W. Collins, Anna Maria Conti, Fred Daniel Gealy, III, Swapnil Lengade +1 more |
2021-12-07 |
$28,128,000 |
| 11094879 |
Structures incorporating and methods of forming metal lines including carbon |
F. Daniel Gealy, Innocenzo Tortorelli, Enrico Varesi |
2021-08-17 |
$19,603,000 |
| 11081644 |
Apparatuses including electrodes having a conductive barrier material and methods of forming same |
Swapnil Lengade, John Mark Meldrim |
2021-08-03 |
$20,873,000 |
| 11038107 |
Semiconductor devices including liners, and related systems |
Dale W. Collins, F. Daniel Gealy, Tuman Earl Allen, III, Swapnil Lengade |
2021-06-15 |
$19,940,000 |
| 10957855 |
Apparatuses including electrodes having a conductive barrier material and methods of forming same |
Swapnil Lengade, John Mark Meldrim |
2021-03-23 |
$19,320,000 |
| 10950791 |
Apparatuses including electrodes having a conductive barrier material and methods of forming same |
Swapnil Lengade, John Mark Meldrim |
2021-03-16 |
$22,312,000 |
| 10930849 |
Techniques for forming memory structures |
Pavan Reddy K. Aella, Dale W. Collins |
2021-02-23 |
$23,020,000 |
| 10892406 |
Phase change memory structures and devices |
Stephen W. Russell, Andrea Redaelli, Enrico Varesi, Innocenzo Tortorelli, Lorenzo Fratin +1 more |
2021-01-12 |
$55,416,000 |
| 10825987 |
Fabrication of electrodes for memory cells |
Pengyuan Zheng, Yongjun Jeff Hu, Yao Jin, Hongqi Li |
2020-11-03 |
$12,106,000 |
| 10777743 |
Memory cell with independently-sized electrode |
Marcello Ravasio, Samuele Sciarrillo |
2020-09-15 |
$12,657,000 |
| 10680175 |
Memory structures having improved write endurance |
Karthik Sarpatwari, Dale W. Collins, Anna Maria Conti, Fred Daniel Gealy, III, Swapnil Lengade +1 more |
2020-06-09 |
$37,008,000 |
| 10651381 |
Apparatuses including electrodes having a conductive barrier material and methods of forming same |
Swapnil Lengade, John Mark Meldrim |
2020-05-12 |
$18,939,000 |
| 10347831 |
Doping of selector and storage materials of a memory cell |
Daniel Gealy, Dale W. Collins, Swapnil Lengade |
2019-07-09 |
$19,303,000 |
| 10290800 |
Memory cells having a number of conductive diffusion barrier materials and manufacturing methods |
F. Daniel Gealy, Davide Colombo |
2019-05-14 |
$21,579,000 |
| 10256406 |
Semiconductor structures including liners and related methods |
Dale W. Collins, F. Daniel Gealy, Tuman Earl Allen, III, Swapnil Lengade |
2019-04-09 |
$22,255,000 |
| 10217936 |
Apparatuses including electrodes having a conductive barrier material and methods of forming same |
Swapnil Lengade, John Mark Meldrim |
2019-02-26 |
$27,872,000 |
| 10153428 |
Structures incorporating and methods of forming metal lines including carbon |
F. Daniel Gealy, Innocenzo Tortorelli, Enrico Varesi |
2018-12-11 |
$7,538,000 |
