Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12431407 | Memory device with low density thermal barrier | David Ross Economy, Yongjun Jeff Hu, Kent H. Zhuang, Robert K. Grubbs | 2025-09-30 |
| 12402318 | Metal gate stacks for CMOS scaling | Yongjun Jeff Hu | 2025-08-26 |
| 11984382 | Memory device with low density thermal barrier | David Ross Economy, Yongjun Jeff Hu, Kent H. Zhuang, Robert K. Grubbs | 2024-05-14 |
| 11778837 | Memory with optimized resistive layers | Lei Wei, Kevin Lee Baker, Efe Sinan Ege, Adam Thomas Barton, Rajasekhar Venigalla | 2023-10-03 |
| 11721606 | Memory device with high resistivity thermal barrier | David Ross Economy | 2023-08-08 |
| 11659778 | Composite electrode material chemistry | Enrico Varesi, Lorenzo Fratin, Dale W. Collins, Yongjun Jeff Hu | 2023-05-23 |
| 11631811 | WSiGe electrode structures for memory devices, and associated devices and systems | Yongjun Jeff Hu | 2023-04-18 |
| 11545623 | Fabrication of electrodes for memory cells | Yongjun Jeff Hu, Yao Jin, Hongqi Li, Andrea Gotti | 2023-01-03 |
| 11380732 | Memory with optimized resistive layers | Lei Wei, Kevin Lee Baker, Efe Sinan Ege, Adam Thomas Barton, Rajasekhar Venigalla | 2022-07-05 |
| 11349068 | Memory cells | Stephen W. Russell, David Ross Economy | 2022-05-31 |
| 11158561 | Memory device with low density thermal barrier | David Ross Economy, Yongjun Jeff Hu, Kent H. Zhuang, Robert K. Grubbs | 2021-10-26 |
| 11011378 | Atom implantation for reduction of compressive stress | Yiping Wang, Caizhi Xu, Ying Rui, Russell A. Benson, Yongjun Jeff Hu +1 more | 2021-05-18 |
| 10964621 | Memory device with high resistivity thermal barrier | David Ross Economy | 2021-03-30 |
| 10825987 | Fabrication of electrodes for memory cells | Yongjun Jeff Hu, Yao Jin, Hongqi Li, Andrea Gotti | 2020-11-03 |