AG

Andrea Gotti

Micron: 31 patents #605 of 6,345Top 10%
IN Intel: 7 patents #5,403 of 30,777Top 20%
LS L.G.L. Electronics S.P.A.: 1 patents #7 of 8Top 90%
📍 Boise, ID: #269 of 3,546 inventorsTop 8%
🗺 Idaho: #362 of 8,810 inventorsTop 5%
Overall (All Time): #77,345 of 4,157,543Top 2%
40
Patents All Time

Issued Patents All Time

Showing 26–40 of 40 patents

Patent #TitleCo-InventorsDate
10069069 Apparatuses including electrodes having a conductive barrier material and methods of forming same Swapnil Lengade, John Mark Meldrim 2018-09-04
10062844 Apparatuses including electrodes having a conductive barrier material and methods of forming same Swapnil Lengade, John Mark Meldrim 2018-08-28
10008665 Doping of selector and storage materials of a memory cell Daniel Gealy, Dale W. Collins, Swapnil Lengade 2018-06-26
9831428 Memory cell with independently-sized electrode Marcello Ravasio, Samuele Sciarrillo 2017-11-28
9716226 Electrode materials and interface layers to minimize chalcogenide interface resistance F. Daniel Gealy, Davide Colombo, Kuo-Wei Chang 2017-07-25
9711717 Memory cells having a number of conductive diffusion barrier materials and manufacturing methods F. Daniel Gealy, Davide Colombo 2017-07-18
9634245 Structures incorporating and methods of forming metal lines including carbon F. Daniel Gealy, Innocenzo Tortorelli, Enrico Varesi 2017-04-25
9543515 Electrode materials and interface layers to minimize chalcogenide interface resistance F. Daniel Gealy, Davide Colombo, Kuo-Wei Chang 2017-01-10
9299929 Phase change memory cells including nitrogenated carbon materials, and related methods Luca Fumagalli 2016-03-29
9257431 Memory cell with independently-sized electrode Marcello Ravasio, Samuele Sciarrillo 2016-02-09
9166158 Apparatuses including electrodes having a conductive barrier material and methods of forming same Swapnil Lengade, John Mark Meldrim 2015-10-20
9130157 Memory cells having a number of conductive diffusion barrier materials and manufacturing methods F. Daniel Gealy, Davide Columbo 2015-09-08
9054295 Phase change memory cells including nitrogenated carbon materials, methods of forming the same, and phase change memory devices including nitrogenated carbon materials Luca Fumagalli 2015-06-09
8828788 Forming electrodes for chalcogenide containing devices Davide Erbetta, Camillo Bresolin 2014-09-09
7584014 Control unit for yarn-braking devices in weft feeders for looms, and tuning method therefor Luca Gotti 2009-09-01