Issued Patents All Time
Showing 25 most recent of 80 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11764071 | Apparatus for stressing semiconductor substrates | Vladimir V. Voronkov, John A. Pitney, Peter Albrecht | 2023-09-19 |
| 11655560 | High resistivity single crystal silicon ingot and wafer having improved mechanical strength | Soubir Basak, Igor Peidous, Carissima Marie Hudson, HyungMin Lee, ByungChun Kim | 2023-05-23 |
| 11655559 | High resistivity single crystal silicon ingot and wafer having improved mechanical strength | Soubir Basak, Igor Peidous, Carissima Marie Hudson, HyungMin Lee, ByungChun Kim | 2023-05-23 |
| 11282715 | Apparatus for stressing semiconductor substrates | Vladimir V. Voronkov, John A. Pitney, Peter Albrecht | 2022-03-22 |
| 11276582 | Apparatus for stressing semiconductor substrates | Vladimir V. Voronkov, John A. Pitney, Peter Albrecht | 2022-03-15 |
| 11276583 | Apparatus for stressing semiconductor substrates | Vladimir V. Voronkov, John A. Pitney, Peter Albrecht | 2022-03-15 |
| 11142844 | High resistivity single crystal silicon ingot and wafer having improved mechanical strength | Soubir Basak, Igor Peidous, Carissima Marie Hudson, HyungMin Lee, ByungChun Kim | 2021-10-12 |
| 10707093 | Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield | Young Jung Lee, Jae Woo Ryu, Byung Chun Kim, Soon Sung Park, Tae Hoon Kim +2 more | 2020-07-07 |
| 10453703 | Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield | Young Jung Lee, Jae Woo Ryu, Byung Chun Kim, Soon Sung Park, Tae Hoon Kim +2 more | 2019-10-22 |
| 10361097 | Apparatus for stressing semiconductor substrates | Vladimir V. Voronkov, John A. Pitney, Peter Albrecht | 2019-07-23 |
| 9634098 | Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method | Vladimir V. Voronkov | 2017-04-25 |
| 9583363 | Processes and apparatus for preparing heterostructures with reduced strain by radial distension | Vladimir V. Voronkov, John A. Pitney, Peter Albrecht | 2017-02-28 |
| 9583364 | Processes and apparatus for preparing heterostructures with reduced strain by radial compression | Vladimir V. Voronkov, John A. Pitney, Peter Albrecht | 2017-02-28 |
| 9142616 | Silicon wafers with suppressed minority carrier lifetime degradation | Vladimir V. Voronkov | 2015-09-22 |
| 9129919 | Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei | Vladimir V. Voronkov, Marco Cornara, Daniela Gambaro, Massimiliano Olmo | 2015-09-08 |
| 8969119 | Processes for suppressing minority carrier lifetime degradation in silicon wafers | Vladimir V. Voronkov | 2015-03-03 |
| 8026145 | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering | Vladimir V. Voronkov, Gabriella Borionetti | 2011-09-27 |
| 7618879 | Non-uniform minority carrier lifetime distributions in high performance silicon power devices | — | 2009-11-17 |
| 7521382 | High resistivity silicon structure and a process for the preparation thereof | Vladimir V. Voronkov, Galina I. Voronkova, Anna V. Batunina | 2009-04-21 |
| 7485928 | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering | Vladimir V. Voronkov, Gabriella Borionetti | 2009-02-03 |
| 7442253 | Process for forming low defect density, ideal oxygen precipitating silicon | Joseph C. Holzer, Marco Cornara, Daniela Gambaro, Massimiliano Olmo, Steve A. Markgraf +3 more | 2008-10-28 |
| 7431765 | Process for preparing single crystal silicon having improved gate oxide integrity | Vladimir V. Voronkov, Paolo Mutti, Francesco Bonoli | 2008-10-07 |
| 7242037 | Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices | — | 2007-07-10 |
| 7229693 | Low defect density, ideal oxygen precipitating silicon | Joseph C. Holzer, Marco Cornara, Daniela Gambaro, Massimiliano Olmo, Steve A. Markgraf +3 more | 2007-06-12 |
| 7135351 | Method for controlling of thermal donor formation in high resistivity CZ silicon | Martin Jeffrey Binns, Jeffrey L. Libbert | 2006-11-14 |