MB

Martin Jeffrey Binns

MM Memc Electronic Materials: 6 patents #35 of 273Top 15%
CL Corner Star Limited: 1 patents #21 of 48Top 45%
📍 Holden, MO: #144 of 898 inventorsTop 20%
🗺 Missouri: #3,070 of 23,789 inventorsTop 15%
Overall (All Time): #729,119 of 4,157,543Top 20%
7
Patents All Time

Issued Patents All Time

Showing 1–7 of 7 patents

Patent #TitleCo-InventorsDate
10060045 Fabrication of indium-doped silicon by the czochralski method Roberto Scala, Luigi Bonanno, Stephan Haringer, Armando Giannattasio, Valentino Moser +1 more 2018-08-28
7135351 Method for controlling of thermal donor formation in high resistivity CZ silicon Robert J. Falster, Jeffrey L. Libbert 2006-11-14
6897084 Control of oxygen precipitate formation in high resistivity CZ silicon Robert J. Falster, Jeffrey L. Libbert 2005-05-24
6743289 Thermal annealing process for producing low defect density single crystal silicon Robert J. Falster, Alan Wang 2004-06-01
6686260 Process for producing thermally annealed wafers having improved internal gettering Robert J. Falster, Harold W. Korb 2004-02-03
6416836 Thermally annealed, low defect density single crystal silicon Robert J. Falster, Alan Wang 2002-07-09
6361619 Thermally annealed wafers having improved internal gettering Robert J. Falster, Harold W. Korb 2002-03-26