Issued Patents All Time
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12410538 | Use of arrays of quartz particles during single crystal silicon ingot production | Richard J. Phillips | 2025-09-09 |
| 12351938 | Methods for producing a product ingot having low oxygen content | JaeWoo Ryu, HyungMin Lee | 2025-07-08 |
| 12221718 | Systems and methods for controlling a gas dopant vaporization rate during a crystal growth process | Chieh Hu, Hsien-Ta Tseng, Chun-Sheng Wu, William L. Luter, Liang-Chin Chen +2 more | 2025-02-11 |
| 12195871 | Systems and methods for controlling a gas dopant vaporization rate during a crystal growth process | Chieh Hu, Hsien-Ta Tseng, Chun-Sheng Wu, William L. Luter, Liang-Chin Chen +2 more | 2025-01-14 |
| 12031229 | Ingot puller apparatus having heat shields with feet having an apex | Jiaying Ke, Sumeet S. Bhagavat, JaeWoo Ryu, Benjamin Michael Meyer, William L. Luter | 2024-07-09 |
| 11932962 | Systems and methods for production of silicon using a horizontal magnetic field | JaeWoo Ryu, JunHwan Ji, WooJin Yoon, Richard J. Phillips | 2024-03-19 |
| 11873575 | Ingot puller apparatus having heat shields with voids therein | Jiaying Ke, Sumeet S. Bhagavat, JaeWoo Ryu, Benjamin Michael Meyer, William L. Luter | 2024-01-16 |
| 11873574 | Systems and methods for production of silicon using a horizontal magnetic field | JaeWoo Ryu, JunHwan Ji, WooJin Yoon, Richard J. Phillips | 2024-01-16 |
| 11767611 | Methods for producing a monocrystalline ingot by horizontal magnetic field Czochralski | JaeWoo Ryu, JunHwan Ji, WooJin Yoon | 2023-09-26 |
| 11739437 | Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth | HyungMin Lee, JaeWoo Ryu, Richard J. Phillips, Robert W. Standley | 2023-08-29 |
| 11680335 | Single crystal silicon ingot having axial uniformity | Jae Woo Ryu | 2023-06-20 |
| 11680336 | Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method | Jae Woo Ryu | 2023-06-20 |
| 11655560 | High resistivity single crystal silicon ingot and wafer having improved mechanical strength | Soubir Basak, Igor Peidous, HyungMin Lee, ByungChun Kim, Robert J. Falster | 2023-05-23 |
| 11655559 | High resistivity single crystal silicon ingot and wafer having improved mechanical strength | Soubir Basak, Igor Peidous, HyungMin Lee, ByungChun Kim, Robert J. Falster | 2023-05-23 |
| 11408090 | Methods for growing a single crystal silicon ingot using continuous Czochralski method | JaeWoo Ryu | 2022-08-09 |
| 11142844 | High resistivity single crystal silicon ingot and wafer having improved mechanical strength | Soubir Basak, Igor Peidous, HyungMin Lee, ByungChun Kim, Robert J. Falster | 2021-10-12 |
| 11111596 | Single crystal silicon ingot having axial uniformity | Jae Woo Ryu | 2021-09-07 |
| 11111597 | Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method | Jae Woo Ryu | 2021-09-07 |
| 11047066 | Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots | JaeWoo Ryu | 2021-06-29 |
| 10954606 | Methods for modeling the impurity concentration of a single crystal silicon ingot | JaeWoo Ryu | 2021-03-23 |
| 10793969 | Sample rod growth and resistivity measurement during single crystal silicon ingot production | JaeWoo Ryu, Richard J. Phillips, Robert W. Standley, HyungMin Lee, YoungJung Lee | 2020-10-06 |
| 10781532 | Methods for determining the resistivity of a polycrystalline silicon melt | JaeWoo Ryu, Richard J. Phillips, Robert W. Standley, HyungMin Lee, YoungJung Lee | 2020-09-22 |
| 10707093 | Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield | Young Jung Lee, Jae Woo Ryu, Byung Chun Kim, Robert J. Falster, Soon Sung Park +2 more | 2020-07-07 |
| 10513796 | Methods for producing low oxygen silicon ingots | Soubir Basak, Gaurab Samanta, Jae Woo Ryu, Hariprasad Sreedharamurthy, Kirk D. McCallum +1 more | 2019-12-24 |
| 10453703 | Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield | Young Jung Lee, Jae Woo Ryu, Byung Chun Kim, Robert J. Falster, Soon Sung Park +2 more | 2019-10-22 |