GS

Gaurab Samanta

GC Globalwafers Co.: 18 patents #10 of 221Top 5%
SL Sunedison Semiconductor Limited: 1 patents #4 of 43Top 10%
📍 Saint Peters, MO: #21 of 433 inventorsTop 5%
🗺 Missouri: #858 of 23,789 inventorsTop 4%
Overall (All Time): #228,780 of 4,157,543Top 6%
19
Patents All Time

Issued Patents All Time

Showing 1–19 of 19 patents

Patent #TitleCo-InventorsDate
12398487 Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size Zheng Lu, Tse-Wei Lu, Feng-Chien Tsai 2025-08-26
12247314 Systems for production of low oxygen content silicon Parthiv Daggolu, Sumeet S. Bhagavat, Soubir Basak, Nan Zhang 2025-03-11
12183625 Method for transfer of a thin layer of silicon Salvador Zepeda 2024-12-31
12037699 Systems for production of low oxygen content silicon Parthiv Daggolu, Sumeet S. Bhagavat, Soubir Basak, Nan Zhang 2024-07-16
11753741 Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size Zheng Lu, Tse-Wei Lu, Feng-Chien Tsai 2023-09-12
11668020 Systems and methods for production of low oxygen content silicon Parthiv Daggolu, Sumeet S. Bhagavat, Soubir Basak, Nan Zhang 2023-06-06
11443978 Method for transfer of a thin layer of silicon Salvador Zepeda 2022-09-13
11313049 Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects Soubir Basak, Parthiv Daggolu, Benjamin Michael Meyer, William L. Luter, Jae Woo Ryu +1 more 2022-04-26
11136691 Systems and methods for production of low oxygen content silicon Parthiv Daggolu, Sumeet S. Bhagavat, Soubir Basak, Nan Zhang 2021-10-05
11111602 Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size Zheng Lu, Tse-Wei Lu, Feng-Chien Tsai 2021-09-07
11072870 Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects Soubir Basak, Parthiv Daggolu, Benjamin Michael Meyer, William L. Luter, Jae Woo Ryu +1 more 2021-07-27
10988859 Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size Zheng Lu, Tse-Wei Lu, Feng-Chien Tsai 2021-04-27
10818540 Method for transfer of a thin layer of silicon Salvador Zepeda 2020-10-27
10745823 Systems and methods for production of low oxygen content silicon Parthiv Daggolu, Sumeet S. Bhagavat, Soubir Basak, Nan Zhang 2020-08-18
10557213 Crystal growing systems and methods including a transparent crucible Richard J. Phillips, Soubir Basak 2020-02-11
10513796 Methods for producing low oxygen silicon ingots Soubir Basak, Carissima Marie Hudson, Jae Woo Ryu, Hariprasad Sreedharamurthy, Kirk D. McCallum +1 more 2019-12-24
10487418 Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth process Parthiv Daggolu, Benjamin Michael Meyer, William L. Luter, Soubir Basak, Sumeet S. Bhagavat +1 more 2019-11-26
10066314 Crystal growing systems and methods including a transparent crucible Richard J. Phillips, Soubir Basak 2018-09-04
9951440 Methods for producing low oxygen silicon ingots Soubir Basak, Carissima Marie Hudson, Jae Woo Ryu, Hariprasad Sreedharamurthy, Kirk D. McCallum +1 more 2018-04-24