Issued Patents All Time
Showing 1–4 of 4 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12398487 | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size | Zheng Lu, Gaurab Samanta, Feng-Chien Tsai | 2025-08-26 |
| 11753741 | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size | Zheng Lu, Gaurab Samanta, Feng-Chien Tsai | 2023-09-12 |
| 11111602 | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size | Zheng Lu, Gaurab Samanta, Feng-Chien Tsai | 2021-09-07 |
| 10988859 | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size | Zheng Lu, Gaurab Samanta, Feng-Chien Tsai | 2021-04-27 |