Issued Patents All Time
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12428750 | Ingot puller apparatus having silicon feed tubes with kick plates | Chun-Sheng Wu, Hong-Huei Huang, Wei-Chen Chou, Chen-Yi Lin, Zheng Lu | 2025-09-30 |
| 12398487 | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size | Zheng Lu, Gaurab Samanta, Tse-Wei Lu | 2025-08-26 |
| 12291795 | Single crystal growth susceptor assembly with sacrifice ring | Hong-Huei Huang, Benjamin Michael Meyer, Chun-Sheng Wu, Wei-Chen Chou, Chen-Yi Lin | 2025-05-06 |
| 12227874 | Methods for determining suitability of Czochralski growth conditions for producing substrates for epitaxy | Zheng Lu, Shan-Hui Lin, Chun-Chin Tu, Chi-Yung Chen, Hong-Huei Huang | 2025-02-18 |
| 12202017 | Cleaning tools and methods for cleaning the pull cable of an ingot puller apparatus | Chin-Hung Ho, Chih-Kai Cheng, Chen-Yi Lin, Tung-Hsiao Li, YoungGil Jeong +1 more | 2025-01-21 |
| 11959189 | Process for preparing ingot having reduced distortion at late body length | Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Hong-Huei Huang | 2024-04-16 |
| 11753741 | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size | Zheng Lu, Gaurab Samanta, Tse-Wei Lu | 2023-09-12 |
| 11111602 | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size | Zheng Lu, Gaurab Samanta, Tse-Wei Lu | 2021-09-07 |
| 10988859 | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size | Zheng Lu, Gaurab Samanta, Tse-Wei Lu | 2021-04-27 |