RS

Robert W. Standley

GC Globalwafers Co.: 14 patents #14 of 221Top 7%
MM Memc Electronic Materials: 5 patents #40 of 273Top 15%
AM Amoco: 1 patents #610 of 1,251Top 50%
SL Sunedison Semiconductor Limited: 1 patents #4 of 43Top 10%
📍 Chesterfield, MO: #215 of 6,461 inventorsTop 4%
🗺 Missouri: #747 of 23,789 inventorsTop 4%
Overall (All Time): #203,497 of 4,157,543Top 5%
21
Patents All Time

Issued Patents All Time

Showing 1–21 of 21 patents

Patent #TitleCo-InventorsDate
12024789 Methods for forming single crystal silicon ingots with improved resistivity control Richard J. Phillips, Parthiv Daggolu, Eric Michael Gitlin, HyungMin Lee, Nan Zhang +2 more 2024-07-02
11942360 Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability Michael R. Seacrist, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen 2024-03-26
11887885 Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability Michael R. Seacrist, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen 2024-01-30
11739437 Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth Carissima Marie Hudson, HyungMin Lee, JaeWoo Ryu, Richard J. Phillips 2023-08-29
11626318 Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability Michael R. Seacrist, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen 2023-04-11
11532501 Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability Michael R. Seacrist, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen 2022-12-20
11075109 Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability Michael R. Seacrist, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen 2021-07-27
10943813 Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability Michael R. Seacrist, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen 2021-03-09
10920337 Methods for forming single crystal silicon ingots with improved resistivity control Richard J. Phillips, Parthiv Daggolu, Eric Michael Gitlin, HyungMin Lee, Nan Zhang +2 more 2021-02-16
10793969 Sample rod growth and resistivity measurement during single crystal silicon ingot production Carissima Marie Hudson, JaeWoo Ryu, Richard J. Phillips, HyungMin Lee, YoungJung Lee 2020-10-06
10796945 High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He—N2 co-implantation Qingmin Liu 2020-10-06
10781532 Methods for determining the resistivity of a polycrystalline silicon melt Carissima Marie Hudson, JaeWoo Ryu, Richard J. Phillips, HyungMin Lee, YoungJung Lee 2020-09-22
10403541 High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He—N2 co-implantation Qingmin Liu 2019-09-03
10224233 High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He-N2 co-implantation Qingmin Liu 2019-03-05
8846493 Methods for producing silicon on insulator structures having high resistivity regions in the handle wafer Jeffrey L. Libbert, Lu Fei 2014-09-30
8735261 Method and system for stripping the edge of a semiconductor wafer 2014-05-27
6652650 Modified susceptor for use in chemical vapor deposition process Charles C. Yang 2003-11-25
6596095 Epitaxial silicon wafer free from autodoping and backside halo and a method and apparatus for the preparation thereof Michael J. Ries, Charles C. Yang 2003-07-22
6444027 Modified susceptor for use in chemical vapor deposition process Charles C. Yang 2002-09-03
6030887 Flattening process for epitaxial semiconductor wafers Ankur H. Desai, David Vadnais 2000-02-29
4673589 Photoconducting amorphous carbon 1987-06-16