MS

Michael R. Seacrist

GC Globalwafers Co.: 12 patents #18 of 221Top 9%
KU Kansas State University: 3 patents #55 of 538Top 15%
MM Memc Electronic Materials: 2 patents #85 of 273Top 35%
UI University Of Illinois: 2 patents #53 of 450Top 15%
TI Texas Instruments: 1 patents #7,357 of 12,488Top 60%
📍 Chesterfield, MO: #215 of 6,461 inventorsTop 4%
🗺 Missouri: #747 of 23,789 inventorsTop 4%
Overall (All Time): #203,496 of 4,157,543Top 5%
21
Patents All Time

Issued Patents All Time

Showing 1–21 of 21 patents

Patent #TitleCo-InventorsDate
11942360 Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen 2024-03-26
11887885 Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen 2024-01-30
11626318 Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen 2023-04-11
11532501 Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen 2022-12-20
11289577 Direct formation of hexagonal boron nitride on silicon based dielectrics Vikas Berry, Sanjay Behura, Phong Nguyen 2022-03-29
11276759 Direct formation of hexagonal boron nitride on silicon based dielectrics Vikas Berry, Sanjay Behura, Phong Nguyen 2022-03-15
11075109 Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen 2021-07-27
10943813 Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen 2021-03-09
10796905 Manufacture of group IIIA-nitride layers on semiconductor on insulator structures Gang Wang 2020-10-06
10658472 Direct formation of hexagonal boron nitride on silicon based dielectrics Vikas Berry, Sanjay Behura, Phong Nguyen 2020-05-19
10573517 Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobalt Vikas Berry, Sanjay Behura, Phong Nguyen 2020-02-25
10262855 Manufacture of Group IIIA-nitride layers on semiconductor on insulator structures Gang Wang 2019-04-16
9355842 Direct and sequential formation of monolayers of boron nitride and graphene on substrates Vikas Berry, Phong Nguyen 2016-05-31
9343533 Direct formation of graphene on semiconductor substrates Vikas Berry 2016-05-17
9029854 Bulk silicon wafer product useful in the manufacture of three dimensional multigate MOSFETs 2015-05-12
9029228 Direct and sequential formation of monolayers of boron nitride and graphene on substrates Vikas Berry, Phong Nguyen 2015-05-12
8884310 Direct formation of graphene on semiconductor substrates Vikas Berry 2014-11-11
8865601 Methods for preparing a semiconductor wafer with high thermal conductivity 2014-10-21
8080482 Methods for preparing a semiconductor structure for use in backside illumination applications 2011-12-20
7566951 Silicon structures with improved resistance to radiation events 2009-07-28
4939099 Process for fabricating isolated vertical bipolar and JFET transistors Joe R. Trogolo, Kenneth Bell 1990-07-03