Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7442253 | Process for forming low defect density, ideal oxygen precipitating silicon | Robert J. Falster, Joseph C. Holzer, Marco Cornara, Daniela Gambaro, Massimiliano Olmo +3 more | 2008-10-28 |
| 7431765 | Process for preparing single crystal silicon having improved gate oxide integrity | Robert J. Falster, Vladimir V. Voronkov, Francesco Bonoli | 2008-10-07 |
| 7229693 | Low defect density, ideal oxygen precipitating silicon | Robert J. Falster, Joseph C. Holzer, Marco Cornara, Daniela Gambaro, Massimiliano Olmo +3 more | 2007-06-12 |
| 6986925 | Single crystal silicon having improved gate oxide integrity | Robert J. Falster, Vladimir V. Voronkov, Francesco Bonoli | 2006-01-17 |
| 6896728 | Process for producing low defect density, ideal oxygen precipitating silicon | Robert J. Falster, Joseph C. Holzer, Marco Cornara, Daniela Gambaro, Massimiliano Olmo +3 more | 2005-05-24 |
| 6840997 | Vacancy, dominsated, defect-free silicon | Robert Falster, Joseph C. Holzer, Steve A. Markgraf, Seamus A. McQuaid, Bayard K. Johnson | 2005-01-11 |
| 6726764 | Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations | Vladmir V. Voronknov | 2004-04-27 |
| 6652646 | Process for growing a silicon crystal segment substantially free from agglomerated intrinsic point defects which allows for variability in the process conditions | Robert J. Falster, Vladimir V. Voronkov | 2003-11-25 |
| 6632278 | Low defect density epitaxial wafer and a process for the preparation thereof | Robert Falster, Joseph C. Holzer, Steve A. Markgraf, Seamus A. McQuaid, Bayard K. Johnson | 2003-10-14 |
| 6555194 | Process for producing low defect density, ideal oxygen precipitating silicon | Robert Falster, Joseph C. Holzer, Marco Cornara, Daniela Gambaro, Massimiliano Olmo +3 more | 2003-04-29 |
| 6500255 | Process for growing silicon crystals which allows for variability in the process conditions while suppressing the formation of agglomerated intrinsic point defects | Robert J. Falster, Vladimir V. Voronkov | 2002-12-31 |
| 6409826 | Low defect density, self-interstitial dominated silicon | Robert Falster, Joseph C. Holzer, Steve A. Markgraf, Seamus A. McQuaid, Bayard K. Johnson | 2002-06-25 |
| 6379642 | Vacancy dominated, defect-free silicon | Robert Falster, Joseph C. Holzer, Steve A. Markgraf, Seamus A. McQuaid, Bayard K. Johnson | 2002-04-30 |
| 6312516 | Process for preparing defect free silicon crystals which allows for variability in process conditions | Robert J. Falster, Vladimir V. Voronkov | 2001-11-06 |
| 6254672 | Low defect density self-interstitial dominated silicon | Robert Falster, Joseph C. Holzer, Steve A. Markgraf, Seamus A. McQuaid, Bayard K. Johnson | 2001-07-03 |
| 6190631 | Low defect density, ideal oxygen precipitating silicon | Robert Falster, Joseph C. Holzer, Marco Cornara, Daniela Gambaro, Massimiliano Olmo +3 more | 2001-02-20 |
| 5919302 | Low defect density vacancy dominated silicon | Robert Falster, Joseph C. Holzer, Steve A. Markgraf, Seamus A. McQuaid, Bayard K. Johnson | 1999-07-06 |