RF

Robert Falster

MM Memc Electronic Materials: 8 patents #23 of 273Top 9%
Overall (All Time): #661,615 of 4,157,543Top 20%
8
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
6840997 Vacancy, dominsated, defect-free silicon Joseph C. Holzer, Steve A. Markgraf, Paolo Mutti, Seamus A. McQuaid, Bayard K. Johnson 2005-01-11
6632278 Low defect density epitaxial wafer and a process for the preparation thereof Joseph C. Holzer, Steve A. Markgraf, Paolo Mutti, Seamus A. McQuaid, Bayard K. Johnson 2003-10-14
6555194 Process for producing low defect density, ideal oxygen precipitating silicon Joseph C. Holzer, Marco Cornara, Daniela Gambaro, Massimiliano Olmo, Steve A. Markgraf +3 more 2003-04-29
6409826 Low defect density, self-interstitial dominated silicon Joseph C. Holzer, Steve A. Markgraf, Paolo Mutti, Seamus A. McQuaid, Bayard K. Johnson 2002-06-25
6379642 Vacancy dominated, defect-free silicon Joseph C. Holzer, Steve A. Markgraf, Paolo Mutti, Seamus A. McQuaid, Bayard K. Johnson 2002-04-30
6254672 Low defect density self-interstitial dominated silicon Joseph C. Holzer, Steve A. Markgraf, Paolo Mutti, Seamus A. McQuaid, Bayard K. Johnson 2001-07-03
6190631 Low defect density, ideal oxygen precipitating silicon Joseph C. Holzer, Marco Cornara, Daniela Gambaro, Massimiliano Olmo, Steve A. Markgraf +3 more 2001-02-20
5919302 Low defect density vacancy dominated silicon Joseph C. Holzer, Steve A. Markgraf, Paolo Mutti, Seamus A. McQuaid, Bayard K. Johnson 1999-07-06