Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10544517 | Growth of a uniformly doped silicon ingot by doping only the initial charge | — | 2020-01-28 |
| 10202705 | Silicon ingot having uniform multiple dopants and method and apparatus for producing same | John P. DeLuca, William L. Luter | 2019-02-12 |
| 9051659 | Silicon single crystal doped with gallium, indium, or aluminum | John P. DeLuca, Frank S. Delk, II, William L. Luter, Neil Middendorf, Dick S. Williams +2 more | 2015-06-09 |
| 7442253 | Process for forming low defect density, ideal oxygen precipitating silicon | Robert J. Falster, Joseph C. Holzer, Marco Cornara, Daniela Gambaro, Massimiliano Olmo +3 more | 2008-10-28 |
| 7229693 | Low defect density, ideal oxygen precipitating silicon | Robert J. Falster, Joseph C. Holzer, Marco Cornara, Daniela Gambaro, Massimiliano Olmo +3 more | 2007-06-12 |
| 6896728 | Process for producing low defect density, ideal oxygen precipitating silicon | Robert J. Falster, Joseph C. Holzer, Marco Cornara, Daniela Gambaro, Massimiliano Olmo +3 more | 2005-05-24 |
| 6840997 | Vacancy, dominsated, defect-free silicon | Robert Falster, Joseph C. Holzer, Steve A. Markgraf, Paolo Mutti, Seamus A. McQuaid | 2005-01-11 |
| 6632278 | Low defect density epitaxial wafer and a process for the preparation thereof | Robert Falster, Joseph C. Holzer, Steve A. Markgraf, Paolo Mutti, Seamus A. McQuaid | 2003-10-14 |
| 6555194 | Process for producing low defect density, ideal oxygen precipitating silicon | Robert Falster, Joseph C. Holzer, Marco Cornara, Daniela Gambaro, Massimiliano Olmo +3 more | 2003-04-29 |
| 6409826 | Low defect density, self-interstitial dominated silicon | Robert Falster, Joseph C. Holzer, Steve A. Markgraf, Paolo Mutti, Seamus A. McQuaid | 2002-06-25 |
| 6379642 | Vacancy dominated, defect-free silicon | Robert Falster, Joseph C. Holzer, Steve A. Markgraf, Paolo Mutti, Seamus A. McQuaid | 2002-04-30 |
| 6315828 | Continuous oxidation process for crystal pulling apparatus | John D. Holder | 2001-11-13 |
| 6254672 | Low defect density self-interstitial dominated silicon | Robert Falster, Joseph C. Holzer, Steve A. Markgraf, Paolo Mutti, Seamus A. McQuaid | 2001-07-03 |
| 6190631 | Low defect density, ideal oxygen precipitating silicon | Robert Falster, Joseph C. Holzer, Marco Cornara, Daniela Gambaro, Massimiliano Olmo +3 more | 2001-02-20 |
| 6039801 | Continuous oxidation process for crystal pulling apparatus | John D. Holder | 2000-03-21 |
| 5919302 | Low defect density vacancy dominated silicon | Robert Falster, Joseph C. Holzer, Steve A. Markgraf, Paolo Mutti, Seamus A. McQuaid | 1999-07-06 |